InGaAs gate-all-around nanowire devices on 300mm Si substrates
N Waldron, C Merckling, L Teugels… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …
Steep switching Si nanowire p-FETs with dopant segregated silicide source/drain at cryogenic temperature
Y Han, J Sun, B Richstein, F Allibert… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Fully silicided source/drain Si gate-all-around (GAA) nanowire (NW) p-FETs with NW
diameter of 5 nm are fabricated and characterized from room temperature (RT) down to 5.5 …
diameter of 5 nm are fabricated and characterized from room temperature (RT) down to 5.5 …
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage …
In this study, we present the steep switching characteristics of bendable feedback field-effect
transistors (FBFETs) consisting of p+–i–n+ Si nanowires (NWs) and dual-top-gate structures …
transistors (FBFETs) consisting of p+–i–n+ Si nanowires (NWs) and dual-top-gate structures …
Interface traps in InAs nanowire tunnel FETs and MOSFETs—Part II: Comparative analysis and trap-induced variability
D Esseni, MG Pala - IEEE transactions on electron devices, 2013 - ieeexplore.ieee.org
This paper extends the analysis of the companion paper by presenting a comparative
analysis of the impact of interface traps on the IV characteristics of InAs nanowire tunnel …
analysis of the impact of interface traps on the IV characteristics of InAs nanowire tunnel …
Gate all around MOSFET with vacuum gate dielectric for improved hot carrier reliability and RF performance
In this paper, gate all around (GAA) MOSFET with vacuum gate dielectric is proposed for the
first time for improved hot carrier reliability and RF performance. Analog and RF …
first time for improved hot carrier reliability and RF performance. Analog and RF …
Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection
Device degradation induced by hot-carrier injection was repaired by electrical annealing
using Joule heat through a built-in heater in a gate. The concentrated high temperature …
using Joule heat through a built-in heater in a gate. The concentrated high temperature …
Charge-based modeling of double-gate and nanowire junctionless FETs including interface-trapped charges
Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such
NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the …
NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the …
A degradation model of double gate and gate-all-around MOSFETs with interface trapped charges including effects of channel mobile charge carriers
The reliability of multigate metal-oxide-semiconductor (MOS) devices is an important issue
for novel nanoscale complementary MOS (CMOS) technologies. We present an analytic …
for novel nanoscale complementary MOS (CMOS) technologies. We present an analytic …
Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
Y Yang, YS Park, J Son, K Cho, S Kim - Scientific reports, 2021 - nature.com
In this study, we examine the electrical characteristics of silicon nanowire feedback field-
effect transistors (FBFETs) with interface trap charges between the channel and gate oxide …
effect transistors (FBFETs) with interface trap charges between the channel and gate oxide …
Replacement fin processing for III–V on Si: From FinFets to nanowires
N Waldron, C Merckling, L Teugels, P Ong… - Solid-State …, 2016 - Elsevier
In this paper we review the details and results of the replacement fin process technique used
to successfully demonstrate InGaAs based channel devices from FinFets to ultra scaled …
to successfully demonstrate InGaAs based channel devices from FinFets to ultra scaled …