Experimental results on the epitaxy of Si and Ge on Si (001) and Si (111) surfaces, which
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Stranski-Krastanov (SK) growth is reported experimentally as the growth mode that is
responsible for the transition to three dimensional islands in heteroepitaxial growth. A kinetic …

Aerosol particles produced over forested areas may affect climate by acting as nuclei for
cloud condensation, but their composition (and hence the chemical species that drive their …

Nanostructured surfaces can be broadly defined as substrates in which the typical features
have dimensions in the range 1–100 nm (although the upper limit of 100 nm may be relaxed …

Real-time observations were made of the shape change from pyramids to domes during the
growth of germanium-silicon islands on silicon (001). Small islands are pyramidal in shape …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Abstract The two-dimensional (2D) to three-dimensional (3D) morphological transition in
strained Ge layers grown on Si (001) is investigated using scanning tunneling microscopy …

The initial stages of the formation of SiGe islands on Si (001) pose a long-standing puzzle.
We show that the behavior can be consistently explained by one simple assumption—that …

На основе анализа публикаций последних лет для системы Ge-на-Si приводятся
устоявшиеся представления о механизмах образования германиевых островков …