A high-power 24–40-GHz transmit–receive front end for phased arrays in 45-nm CMOS SOI
M Lokhandwala, L Gao… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article presents a dual-band millimeter-wave front end in 45-nm CMOS silicon-on-
insulator (SOI) for 5G applications. The front end is composed of a low-noise amplifier (LNA) …
insulator (SOI) for 5G applications. The front end is composed of a low-noise amplifier (LNA) …
A small-size K-band SPDT switch using alternate CMOS structure with resonating inductor matching
A single-pole double-throw (SPDT) CMOS switch at 15-25 GHz is presented, which has a
small size, low insertion losses, and high-power handling capabilities for both output nodes …
small size, low insertion losses, and high-power handling capabilities for both output nodes …
A Compact Ka-Band Integrated Doherty Amplifier With Reconfigurable Input Network
In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …
High power handling GaAs SP4T Switch-based Beam-Switching planar antenna module for 5G New-Radio FR2 applications
In this paper, a beam-switching antenna module for 5G New-Radio (NR) frequency range 2
(FR2) applications is proposed. The module is constructed with a single-pole-quadruple …
(FR2) applications is proposed. The module is constructed with a single-pole-quadruple …
Design of a compact RF front-end transceiver module for 5G new-radio applications
This article presents a new transceiver configuration based on the low-noise power amplifier
(LNPA) approach targeting the reduction in size and the overall biasing complexity. In such …
(LNPA) approach targeting the reduction in size and the overall biasing complexity. In such …
A novel compact self-packaged SPDT switchable BPFs based on SISL platform
This paper presents a novel compact low loss switchable bandpass filter (BPF) with self-
packaging by using substrate-integrated suspended line (SISL) technology. The proposed …
packaging by using substrate-integrated suspended line (SISL) technology. The proposed …
Miniaturized, ultra-wideband and high isolation single pole double throw switch by using π-type topology in GaAs pHEMT technology
In this brief, a compact ultra-wideband monolithic microwave integrated circuit single pole
double throw (SPDT) switch with high isolation level and low insertion loss is presented. A π …
double throw (SPDT) switch with high isolation level and low insertion loss is presented. A π …
Wide-bandwidth and high-linearity envelope-tracking front-end module for LTE-A carrier aggregation applications
WT Tsai, CY Liou, ZA Peng… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply
modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw …
modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw …
Millimeter-Wave single-pole-double-throw switch design with Stacked-FET topology using network cascading analysis
In this paper, the correlation between the key performance of the shunt-type single-pole-
double-throw (SPDT) switch circuitry and the intrinsic device parameters is theoretically …
double-throw (SPDT) switch circuitry and the intrinsic device parameters is theoretically …
GaAs MMIC low noise amplifier with integrated high-power absorptive receive protection switch
CVN Rao, DK Ghodgaonkar… - IEEE Microwave and …, 2018 - ieeexplore.ieee.org
This letter reports a GaAs monolithic microwave integrated circuit (MMIC) low noise amplifier
(LNA) with integrated high-power absorptive receive protection switch realized using 0.13 …
(LNA) with integrated high-power absorptive receive protection switch realized using 0.13 …