Recent experiments have demonstrated that the electron transmission yield through chiral
molecules depends on the electron spin orientation. This phenomenon has been termed the …

A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …

We report a giant spin Hall effect in β-W thin films. Using spin torque induced ferromagnetic
resonance with a β-W/CoFeB bilayer microstrip, we determine the spin Hall angle to be| θ …

For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …

The chiral-induced spin selectivity (CISS) effect was recently established experimentally and
theoretically. Here, we review some of the new findings and discuss applications that can …

We show that a direct current in a tantalum microstrip can induce steady-state magnetic
oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE) …

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic
tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy …

The use of spin transfer nano-oscillators (STNOs) to generate microwave signals in
nanoscale devices has aroused tremendous and continuous research interest in recent …

Highly sensitive microwave devices that are operational at room temperature are important
for high-speed multiplex telecommunications. Quantum devices such as superconducting …

Several technologies are currently in use for computer memory devices. However, there is a
need for a universal memory device that has high density, high speed and low power …