Ferromagnetic semiconductors: moving beyond (ga, mn) as
The recent development of MBE techniques for growth of III–V ferromagnetic
semiconductors has created materials with exceptional promise in spintronics, that is …
semiconductors has created materials with exceptional promise in spintronics, that is …
Ferromagnetism of ZnO and GaN: a review
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …
[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Exchange interactions in III-V and group-IV diluted magnetic semiconductors
Effective pair exchange interactions between Mn atoms in III-V and group-IV diluted
magnetic semiconductors are determined from a two-step first-principles procedure. In the …
magnetic semiconductors are determined from a two-step first-principles procedure. In the …
Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN
XY Cui, JE Medvedeva, B Delley, AJ Freeman… - Physical review …, 2005 - APS
Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr∶
GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly …
GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly …
Low-temperature ferromagnetism in (Ga, Mn)N: Ab initio calculations
K Sato, W Schweika, PH Dederichs… - Physical Review B …, 2004 - APS
The magnetic properties of dilute magnetic semiconductors (DMSs) are calculated from first-
principles by mapping the ab initio results on a classical Heisenberg model. By using the …
principles by mapping the ab initio results on a classical Heisenberg model. By using the …
The acceptor level in group III nitrides
T Graf, M Gjukic, MS Brandt, M Stutzmann… - Applied Physics …, 2002 - pubs.aip.org
Molecular-beam-epitaxy grown GaN: Mn and AlN: Mn layers with Mn concentrations around
10 20 cm− 3 were investigated by optical absorption and photoconductivity measurements …
10 20 cm− 3 were investigated by optical absorption and photoconductivity measurements …
Electronic structure and magnetism of Mn-doped GaN
Mn-doped semiconductors are extremely interesting systems due to their novel magnetic
properties suitable for the spintronics applications. It has been shown recently by both theory …
properties suitable for the spintronics applications. It has been shown recently by both theory …
Double-exchange mechanisms for Mn-doped III-V ferromagnetic semiconductors
PM Krstajić, FM Peeters, VA Ivanov, V Fleurov… - Physical Review B …, 2004 - APS
A microscopic model of indirect exchange interaction between transition metal impurities in
dilute magnetic semiconductors (DMS) is proposed. The hybridization of the impurity d …
dilute magnetic semiconductors (DMS) is proposed. The hybridization of the impurity d …
Spintronics and spintronics materials
VA Ivanov, TG Aminov, VM Novotortsev… - Russian Chemical …, 2004 - Springer
The review concerns the fundamentals of spintronics (spin-transport electronics). The
material covers spin-spin interactions and spin relaxation in semiconductors as well as spin …
material covers spin-spin interactions and spin relaxation in semiconductors as well as spin …