Field-Effect Transistor sensors (FET-sensors) have been receiving increasing attention for
biomolecular sensing over the last two decades due to their potential for ultra-high sensitivity …

A physical model is presented which quantitatively describes the threshold voltage
instability, commonly known as drift, in n-channel Si3N4-gate and as well as Al2O3-gate pH …

This work presents modeling of temperature and temporal drift characteristics of Al 2 O 3-
gate Ion-Sensitive Field-Effect Transistor (ISFET) and performance enhancement of ISFET …

Ion-selective field effect transistors (ISFETs) exhibit instability, commonly known as drift, in
the form of a slow, monotonic, temporal increase in the threshold voltage of the device. A …

A stack consisting of atomic layer deposited (ALD) aluminum oxide (Al2O3) and hexagonal
boron nitride (h-BN) is proposed and demonstrated as the sensing layer of extended gate …

A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect
Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the …

Ion sensitive field-effect transistor in DNA sequencing application is gaining popularity
because of its capability to work massive parallel sensor arrays, especially when integrated …

The chemical and morphological properties of thin aluminum oxide film surfaces (Al 2 O 3
having 10 nm in thickness) in the as-deposited (dry) and after immersion (in pH buffer …

Modeling of non-idealities in ion-sensitive field-effect transistors (ISFET) is crucial for
obtaining precise pH-sensing characteristics. This paper presents an accurate Simulation …

The accuracy of the ion-selctive field effect transistor (ISFET) is limited by errors ascribed to
drift and hysteresis. In this work operation of the ISFET as a stand-alone pH sensor …