Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
Recent progress in Ga2O3 power devices
M Higashiwaki, K Sasaki, H Murakami… - Semiconductor …, 2016 - iopscience.iop.org
This is a review article on the current status and future prospects of the research and
development on gallium oxide (Ga 2 O 3) power devices. Ga 2 O 3 possesses excellent …
development on gallium oxide (Ga 2 O 3) power devices. Ga 2 O 3 possesses excellent …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
State-of-the-art technologies of gallium oxide power devices
M Higashiwaki, A Kuramata, H Murakami… - Journal of Physics D …, 2017 - iopscience.iop.org
Abstract Gallium oxide (Ga $ _ {2} $ O $ _ {3} $) has gained increased attention for power
devices due to its superior material properties and the availability of economical device …
devices due to its superior material properties and the availability of economical device …
Heteroepitaxy of corundum-structured α-Ga2O3 thin films on α-Al2O3 substrates by ultrasonic mist chemical vapor deposition
D Shinohara, S Fujita - Japanese Journal of Applied Physics, 2008 - iopscience.iop.org
Ga 2 O 3 thin films of the α-phase, that is, the corundum structure (in the trigonal system),
have been epitaxially obtained on sapphire (α-Al 2 O 3) substrates, in contrast to the strong …
have been epitaxially obtained on sapphire (α-Al 2 O 3) substrates, in contrast to the strong …
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
Y Oshima, EG Víllora, Y Matsushita… - Journal of Applied …, 2015 - pubs.aip.org
Epitaxial growth of ε-Ga 2 O 3 is demonstrated for the first time. The ε-Ga 2 O 3 films are
grown on GaN (0001), AlN (0001), and β-Ga 2 O 3 ( 2 01) by halide vapor phase epitaxy …
grown on GaN (0001), AlN (0001), and β-Ga 2 O 3 ( 2 01) by halide vapor phase epitaxy …
Thermodynamically metastable α-, ε-(or κ-), and γ-Ga2O3: From material growth to device applications
M Biswas, H Nishinaka - APL Materials, 2022 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
First-principles study of self-trapped holes and acceptor impurities in polymorphs
We investigate the stability of self-trapped holes (STHs) and the acceptor levels of
substitutional Mg and N impurities in α-, β-, δ-, and ɛ-Ga 2 O 3 using first-principles …
substitutional Mg and N impurities in α-, β-, δ-, and ɛ-Ga 2 O 3 using first-principles …
Atomic scale mechanism of β to γ phase transformation in gallium oxide
We report the detailed mechanism behind the β to γ phase transformation in Sn-doped and
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …