AIN thin films were grown by an alternate supply of trimethyl aluminum (TMA) and ammonia,
ie, according to the processing scheme of the atomic layer epitaxy (ALE) technique. In …

Thin BC2N films have been obtained by chemical vapour deposition (CVD) from BCl3 and
CH3CN. The layers were two types according to their appearance: metallic and black. The …

Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth
in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD …

Al films were grown by chemical vapor deposition at 400, 550, and 700° C on GaAs (100)
substrates using the molecular precursor dimethylethylamine alane. The film morphology …

Maskless patterning of aluminum has been achieved by using visible light from a copper
bromide vapor laser for pyrolytic decomposition of trimethylamine alane (TMAA) on silicon …

The concept of “molecular engineering” has been employed to systematically influence the
physical and chemical properties of metalorganic compounds with the aim of using them as …

Films of metallic aluminum are utilized widely in several industries. We will begin this
chapter with a brief summary of these and focus on some of the critical physical properties …

Aluminum has been used widely as a conducting material in the fabrication of integrated
circuits, and chemical vapor deposition process for Al has been actively investigated for the …

The composition of the gaseous phase during pyrolytic laser‐induced chemical vapour
deposition (LCVD) of aluminium from trimethylaluminium (TMA) was determined. The …

The composition of the gaseous phases during pyrolytic laser-induced chemical vapor
deposition (LCVD) of aluminium from triisobutylaluminium (TIBA) and trimethylamine alane …