Recent advances in GaN‐based power HEMT devices

J He, WC Cheng, Q Wang, K Cheng… - Advanced electronic …, 2021 - Wiley Online Library
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Status of aluminum oxide gate dielectric technology for insulated-gate GaN-based devices

A Calzolaro, T Mikolajick, A Wachowiak - Materials, 2022 - mdpi.com
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices

S Huang, X Liu, X Wang, X Kang… - … on Electron Devices, 2017 - ieeexplore.ieee.org
(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

H Jiang, C Liu, Y Chen, X Lu… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

Generating intense electric fields in 2D materials by dual ionic gating

BI Weintrub, YL Hsieh, S Kovalchuk… - Nature …, 2022 - nature.com
The application of an electric field through two-dimensional materials (2DMs) modifies their
properties. For example, a bandgap opens in semimetallic bilayer graphene while the …

High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure

S Huang, X Liu, X Wang, X Kang… - IEEE Electron …, 2016 - ieeexplore.ieee.org
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …

Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by …

K Deng, X Wang, S Huang, Q Jiang, H Yin, J Fan… - Applied Surface …, 2023 - Elsevier
A 3 nm-thick SiO x N y grown by plasma-enhanced atomic layer deposition (PEALD) at 500°
C is utilized as the interfacial layer to suppress the deep interface states and dielectric …

Investigation of the Trap States and Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

H Sun, M Wang, R Yin, J Chen, S Xue… - … on Electron Devices, 2019 - ieeexplore.ieee.org
A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical
vapor deposition (MOCVD) grown in-situ Si 3 N 4 (3 nm) and a thick lowpressure chemical …

Realization of high quality silicon nitride deposition at low temperatures

VK Surana, N Bhardwaj, A Rawat, Y Yadav… - Journal of Applied …, 2019 - pubs.aip.org
This work demonstrates the low temperature thin-film deposition of silicon nitride (⁠ SiN x⁠)
for III-nitride-based high electron mobility transistors using inductively coupled plasma …

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx (insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level …

Y Yao, Q Jiang, S Huang, X Wang, X Luo, H Jin… - Applied Physics …, 2021 - pubs.aip.org
The physical mechanism of threshold voltage (V TH) instability in AlGaN/GaN metal-
insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was identified via …