A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier)
sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance …

The phenomenon of electron tunnelling has been known since the advent of quantum
mechanics, but continues to enrich our understanding of many fields of physics, as well as …

Thin van der Waals (vdW) layered magnetic materials hold the possibility of realizing vdW
heterostructures with new functionalities. Here, we report on the realization and investigation …

The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs), is the key to
developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel …

Calculation of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe (001)
junction is reported. The conductances of the junction in its ferromagnetic and …

We report on a theoretical study of spin-polarized quantum transport through a Ni-
bezenedithiol (BDT)-Ni molecular magnetic tunnel junction (MTJ). Our study is based on …

We present tunneling experiments on Fe (001)/MgO (20 Å)/FeCo (001) single-crystal
epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel …

We fabricated fully epitaxial Fe (001)/MgO (001)/Fe (001) magnetic tunnel junctions (MTJs)
and observed a magneto-resistance (MR) ratio of 88% at T= 293 K (146% at T= 20 K), the …

The non-local spin injection in lateral spin valves is strongly expected to be an effective
method to generate a pure spin current for potential spintronic application. However, the …

Magnetic interactions involving ferromagnetic layers separated by an insulating barrier have
been studied experimentally on a fully epitaxial hard-soft magnetic tunnel junction: F e/M g …