Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices
The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …
development of epitaxial growth techniques for single-crystalline semiconductors. However …
Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
B Kunert, Y Mols, M Baryshniskova… - Semiconductor …, 2018 - iopscience.iop.org
The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …
of new device applications and functionalities which would benefit from both the excellent …
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …
decades. Notable progress has recently been made in this research area, fueled by …
[图书][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
Topical review: pathways toward cost-effective single-junction III–V solar cells
III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with
significantly higher absorption compared to silicon. The high absorption allows for the …
significantly higher absorption compared to silicon. The high absorption allows for the …
Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole.
A low-dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a
standard moderate-quality substrate hollowed out by a large square hole. Dislocations are …
standard moderate-quality substrate hollowed out by a large square hole. Dislocations are …
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD
Y Du, B Xu, G Wang, S Gu, B Li, Z Kong, J Yu… - Journal of Materials …, 2021 - Springer
This article presents novel process methods to grow GaAs on 200 mm Si substrates with low
threading dislocation density (TDD) and no anti-phase domains (APDs). The GaAs layers …
threading dislocation density (TDD) and no anti-phase domains (APDs). The GaAs layers …
Fabrication of high-quality GaAs-based photodetector arrays on Si
We report on fabrication and characterization of high-quality 32× 32 GaAs photodetector
(PD) arrays on Si substrates fabricated by wafer bonding and epitaxial lift-off (ELO) …
(PD) arrays on Si substrates fabricated by wafer bonding and epitaxial lift-off (ELO) …