Study of voltage balancing techniques for series-connected insulated gate power devices

VU Pawaskar, G Gohil… - IEEE Journal of Emerging …, 2021 - ieeexplore.ieee.org
An efficient and cost-effective medium-voltage (MV) power semiconductor switch capable of
high switching speed is highly desirable for many existing and emerging high-power MV …

An active voltage balancing control based on adjusting driving signal time delay for series-connected SiC MOSFETs

T Wang, H Lin, S Liu - IEEE Journal of Emerging and Selected …, 2019 - ieeexplore.ieee.org
Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …

Modeling, Design, and Evaluation of Active Balancing for Series-Connected SiC MOSFETs

K Sun, E Raszmann, J Wang, X Lin… - … on Power Electronics, 2021 - ieeexplore.ieee.org
Series connection of SiC MOSFET s provides an effective alternative to achieving higher
blocking voltage with simpler circuit topologies. However, the voltage imbalance during the …

[HTML][HTML] Review of Voltage Balancing Techniques for Series-Connected SiC Metal–Oxide–Semiconductor Field-Effect Transistors

L Sun, M Qiao, Y Xia, B Wu, F Chen - Energies, 2024 - mdpi.com
Power devices in series are low-voltage power devices used in medium-and high-voltage
applications in a more direct program. However, when power devices in series are used …

Active gate driver with turn-off delay control for voltage balancing of series–connected SiC MOSFETs

M Son, Y Cho, S Baek - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
Connecting semiconductor switches in series is a way to increase the voltage rating of a
power electronic converter. However, if two switches are directly connected without any …

A novel gate driver for active voltage balancing in 1.7 kV series connected SiC MOSFETs

S Parashar, S Bhattacharya - 2019 IEEE Applied Power …, 2019 - ieeexplore.ieee.org
This paper addresses active voltage balancing method for series connected 1.7 kV SiC
MOSFETs. The series connection of 1.7 kV SiC MOSFETs have potential to replace medium …

An FPGA-based voltage balancing control for multi-HV-IGBTs in series connection

S Ji, F Wang, LM Tolbert, T Lu… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The series connection of insulated gate bipolar transistors (IGBTs) allows operation at
voltage levels higher than the rated voltage of one IGBT and has less power semiconductor …

Design and experimental verification of a high-voltage series-stacked GaN eHEMT module for electric vehicle applications

M Shojaie, N Elsayad, H Moradisizkoohi… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
A gallium nitride (GaN) power switching module with extended rated voltage is proposed for
electric vehicle power conditioning system. Limited breakdown voltage of GaN high-electron …

Gate Drivers for High-Frequency Application of Silicon-Carbide MOSFETs: Design considerations for faster growth of LV and MV applications

A Anurag, S Acharya… - IEEE Power Electronics …, 2019 - ieeexplore.ieee.org
With the advent of wide-bandgap (WBG) semiconductor devices, silicon-carbide (SiC)-
based MOSFETs for high voltage and current serve as a viable replacement for conventional …

Medium voltage flying capacitor DC–DC converter with high-frequency TCM-Q2L control

R Kopacz, M Harasimczuk, P Trochimiuk… - … on Power Electronics, 2021 - ieeexplore.ieee.org
This article presents a novel control method for a multilevel dc–dc flying capacitor converter
for applications in medium voltage range. Quasi-two-level modulation provides the …