Tunnel FET technology: A reliability perspective
Abstract Tunneling-field-effect-transistor (TFET) has emerged as an alternative for
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …
III–V heterostructure tunnel field-effect transistor
The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the
tunneling direction have been fabricated using a novel gate-recess process, resulting in …
tunneling direction have been fabricated using a novel gate-recess process, resulting in …
InAs/Si hetero-junction nanotube tunnel transistors
Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel
FETs (TFETs) have shown significant enhancement in 'ON'state tunnel current over their all …
FETs (TFETs) have shown significant enhancement in 'ON'state tunnel current over their all …
Tunnel FET RF rectifier design for energy harvesting applications
Radio-frequency (RF)-powered energy harvesting systems have offered new perspectives in
various scientific and clinical applications such as health monitoring, bio-signal acquisition …
various scientific and clinical applications such as health monitoring, bio-signal acquisition …
Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications
Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved
energy efficiency for both digital and analog/RF application. In this paper, recent approaches …
energy efficiency for both digital and analog/RF application. In this paper, recent approaches …
InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
InGaAs homojunction Tunnel FET devices are demonstrated with sub-60 mV/dec Sub-
threshold Swing (SS) measured in DC. A 54 mV/dec SS is achieved at 100 pA/μm over a …
threshold Swing (SS) measured in DC. A 54 mV/dec SS is achieved at 100 pA/μm over a …
Device performance of heterojunction tunneling field-effect transistors based on transition metal dichalcogenide monolayer
The ballistic device performances of monolayer transition metal dichalcogenide (MX2)
tunneling field-effect transistors (TFETs) and the drive current enhancement via …
tunneling field-effect transistors (TFETs) and the drive current enhancement via …
Soft-error performance evaluation on emerging low power devices
Radiation-induced single-event upset (SEU) has become a key challenge for cloud
computing. The proposed introduction of low bandgap materials (Ge, III-Vs) as channel …
computing. The proposed introduction of low bandgap materials (Ge, III-Vs) as channel …