Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
Part I: Physical insight into carbon-doping-induced delayed avalanche action in GaN buffer in AlGaN/GaN HEMTs
Physics behind the improvement in breakdown voltage of AlGaN/GaN HEMTs with carbon-
doping of GaN buffer is discussed. Modeling of carbon as acceptor traps and self …
doping of GaN buffer is discussed. Modeling of carbon as acceptor traps and self …
Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure
The p-GaN/AlGaN/GaN heterostructure, predominantly epitaxially grown on large-scale
silicon wafers, has been widely used for producing consumer power switching devices and …
silicon wafers, has been widely used for producing consumer power switching devices and …
IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs
The dynamic on-resistance (r ON) of two mainstream 600 V/650 V p-GaN gate power high-
electron-mobility transistors (HEMTs) with Ohmic-and Schottky-type p-GaN gate contacts are …
electron-mobility transistors (HEMTs) with Ohmic-and Schottky-type p-GaN gate contacts are …
Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer
Low-pressure chemical vapor deposition (LPCVD) technique is utilized for SiN x passivation
of AlGaN/GaN high-electron-mobility transistors (HEMTs). A robust SiN x/AlGaN interface …
of AlGaN/GaN high-electron-mobility transistors (HEMTs). A robust SiN x/AlGaN interface …
Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs
We report a unique OFF-state drain-to-source critical stress voltage above which the
dynamic performance of AlGaN/GaN HEMTs is significantly deteriorated. Physical insights …
dynamic performance of AlGaN/GaN HEMTs is significantly deteriorated. Physical insights …
High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design
HC Chiu, YS Chang, BH Li, HC Wang… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility
transistor (HEMT) with composite AlN/Al 0.17 Ga 0.83 N/Al 0.3 Ga 0.7 N barrier layers is …
transistor (HEMT) with composite AlN/Al 0.17 Ga 0.83 N/Al 0.3 Ga 0.7 N barrier layers is …
Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- Dielectric
In this letter, normally-OFF AlGaN/GaN metal-oxide-semiconductor high-electron-mobility
transistors with a threshold voltage of 2.2 V have been achieved by an atomic layer etching …
transistors with a threshold voltage of 2.2 V have been achieved by an atomic layer etching …