The discovery of Dirac fermions in a number of 2D and 3D materials boosted the solid-state research in an unprecedented way. Among the many hopes of using their exceptional …
We discuss and illustrate the appearance of topological fermions and bosons in triple-point metals where a band crossing of three electronic bands occurs close to the Fermi level …
Band gap is known as an effective parameter for tuning the Landé g factor in semiconductors and can be manipulated in a wide range through the bowing effect in …
Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and …
The search for exotic new topological states of matter in widely accessible materials, for which the manufacturing process is mastered, is one of the major challenges of the current …
The search for room temperature quantum spin Hall insulators (QSHIs) based on widely available materials and a controlled manufacturing process is one of the major challenges of …
InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
InAsSb is the only direct-bandgap III–V compound semiconductor alloy that absorbs and emits light over the entire long-wavelength infrared band (8–12 micron). We measured its …
Generating large topologically protected surface currents using conventional III–V infrared materials such as InAsSb/InGaSbAs quantum wells (QWs) and superlattices (SLs) has been …