Advances in solution-processed quantum dots based hybrid structures for infrared photodetector

K Ba, J Wang - Materials Today, 2022 - Elsevier
Infrared photodetector based on solution-processed colloidal quantum dots (QDs), which
possess the special properties of wide-size-tunable bandgap, high quantum confinement …

Coherent emission in the vicinity of 10 THz due to Auger-suppressed recombination of Dirac fermions in HgCdTe quantum wells

SV Morozov, VV Rumyantsev, MS Zholudev… - ACS …, 2021 - ACS Publications
The discovery of Dirac fermions in a number of 2D and 3D materials boosted the solid-state
research in an unprecedented way. Among the many hopes of using their exceptional …

Topology of triple-point metals

GW Winkler, S Singh, AA Soluyanov - Chinese Physics B, 2019 - iopscience.iop.org
We discuss and illustrate the appearance of topological fermions and bosons in triple-point
metals where a band crossing of three electronic bands occurs close to the Fermi level …

-factor engineering with InAsSb alloys toward zero band gap limit

Y Jiang, M Ermolaev, S Moon, G Kipshidze, G Belenky… - Physical Review B, 2023 - APS
Band gap is known as an effective parameter for tuning the Landé g factor in
semiconductors and can be manipulated in a wide range through the bowing effect in …

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Y Jiang, M Ermolaev, G Kipshidze, S Moon… - Nature …, 2022 - nature.com
Realizing a large Landé g-factor of electrons in solid-state materials has long been thought
of as a rewarding task as it can trigger abundant immediate applications in spintronics and …

Higher-order topological insulator in cubic semiconductor quantum wells

SS Krishtopenko - Scientific Reports, 2021 - nature.com
The search for exotic new topological states of matter in widely accessible materials, for
which the manufacturing process is mastered, is one of the major challenges of the current …

Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog

SS Krishtopenko, F Teppe - Science advances, 2018 - science.org
The search for room temperature quantum spin Hall insulators (QSHIs) based on widely
available materials and a controlled manufacturing process is one of the major challenges of …

InAsSb-based photodetectors

EH Steenbergen - Mid-infrared Optoelectronics, 2020 - Elsevier
InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …

[HTML][HTML] Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap

SP Svensson, WA Beck, WL Sarney… - Applied Physics …, 2019 - pubs.aip.org
InAsSb is the only direct-bandgap III–V compound semiconductor alloy that absorbs and
emits light over the entire long-wavelength infrared band (8–12 micron). We measured its …

[HTML][HTML] Optimization of hybridized InAsSb/InGaSb semiconductor topological materials

HJ Haugan, D Das, S Bharadwaj… - Applied Physics …, 2022 - pubs.aip.org
Generating large topologically protected surface currents using conventional III–V infrared
materials such as InAsSb/InGaSbAs quantum wells (QWs) and superlattices (SLs) has been …