A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
G Deshpande, S Bhattacharya, J Ajayan… - Journal of Electronic …, 2024 - Springer
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
Double gate double-channel AlGaN/GaN MOS HEMT and its applications to LNA with Sub-1 dB noise figure
The manuscript proposes a novel double gate double-channel AlGaN/GaN MOS high
electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) …
electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) …
Impact of Gate Angle Variations on DC and RF Performance of Enhancement-Mode Al0.15Ga0.85N/GaN/Al0.07Ga0.93N MIS-HEMT Device
L Lino, R Saravana Kumar, M Leeban Moses… - Journal of Electronic …, 2025 - Springer
In this paper, we propose an enhancement-mode (E-mode)-operated Al0. 15Ga0.
85N/GaN/Al0. 07Ga0. 93N metal–insulator–semiconductor high-electron-mobility transistor …
85N/GaN/Al0. 07Ga0. 93N metal–insulator–semiconductor high-electron-mobility transistor …
[HTML][HTML] Development and Characterization of an Advanced Voltage-Controllable Capacitor Based on AlInGaN/GaN-Si (111) Epitaxy
H Guan, G Shen - Coatings, 2024 - mdpi.com
The AlInGaN/GaN heterojunction epitaxy material with high cutoff frequency and saturated
power density has become a very popular candidate for millimeter wave applications in next …
power density has become a very popular candidate for millimeter wave applications in next …
Influence of Buffer Length and Mole Fraction on Analog Performances of a Symmetrical Underlapped DG Si/SiGe-based MOS-HEMT Device
The Authors through this paper have investigated and performed an in-depth study of the
Analog performances of an Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide …
Analog performances of an Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide …
Impact of mole fraction variation on the analog/RF performance of quaternary InAlGaN DG MOS-HEMTs
S Ghosh, G Bagla, H Mukherjee, M Kar… - Journal of Electronic …, 2022 - Springer
In this paper, the analog and radio-frequency (RF) performance of a symmetric underlapped
quaternary InAlGaN double-gated metal oxide semiconductor high-electron-mobility …
quaternary InAlGaN double-gated metal oxide semiconductor high-electron-mobility …
Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation
K Sorkhel, A Ghosh, H Mukherjee… - 2023 IEEE 2nd …, 2023 - ieeexplore.ieee.org
This article investigates the effect of varying buffer layer width of underlapped double gate
InAlGaN/GaN MOS-HEMT's with Hafnium based high-k dielectric gate oxide material on its …
InAlGaN/GaN MOS-HEMT's with Hafnium based high-k dielectric gate oxide material on its …
Limitation of CMOS Scaling and Effects of Parasitic Elements on the RF Performance
A Kundu - Handbook of Emerging Materials for Semiconductor …, 2024 - Springer
The invention of the transistor marked a pivotal moment in microelectronics, enabling the
development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs …
development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs …
An enhanced dry-wet hybrid cyclic etching method for high resistance Si (111) based AlInGaN/GaN heterojunction epitaxy: comparison on various etching process
G Shen, Y Fang, H Guan - 2024 IEEE MTT-S International …, 2024 - ieeexplore.ieee.org
An enhanced dry-wet hybrid cyclic etching technology based on oxygen plasma and
hydrochloric acid is developed on high resistance (HR) Si (111)-AlInGaN/GaN …
hydrochloric acid is developed on high resistance (HR) Si (111)-AlInGaN/GaN …
Multigate MOS-HEMT
A Kundu, M Kar - HEMT Technology and Applications, 2022 - Springer
Abstract Gallium nitride (GaN) based High-Electron-Mobility Transistors (HEMTs), and in
particular, aluminum gallium nitride (AlGaN)/GaN devices have become a popular choice …
particular, aluminum gallium nitride (AlGaN)/GaN devices have become a popular choice …