Electron trapping effects in SiC Schottky diodes: Review and comment
JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
Local thermal resistance extraction in monolithic microwave integrated circuits
M Vellvehi, X Perpiņā, J Leon… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
The thermal resistance of a high electron mobility transistor (HEMT) forming part of a
monolithic microwave integrated circuit (MMIC) is noninvasively extracted under real …
monolithic microwave integrated circuit (MMIC) is noninvasively extracted under real …
Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices
M Vellvehi, X Perpiñà, J León… - … on Electron Devices …, 2017 - ieeexplore.ieee.org
In this work, Lock-in Infrared Thermography (LIT) is presented as a powerful tool for failure
analysis in power devices. These devices are electrically characterized in the frequency …
analysis in power devices. These devices are electrically characterized in the frequency …
Local non invasive study of SiC diodes with abnormal electrical behavior
Abstract In this work, Silicon Carbide Schottky Barrier Diodes (SBDs) were inspected by
Infrared Lock-In Thermography to study and determine the origin of structural weak spots …
Infrared Lock-In Thermography to study and determine the origin of structural weak spots …
[图书][B] Advanced analysis of microelectronic devices and systems by lock-in IR thermography
J León Cerro - 2016 - ddd.uab.cat
Desde los inicios de la revolución microelectrónica, su evolución tecnológica siempre se ha
visto marcada por la búsqueda constante de dispositivos y sistemas electrónicos …
visto marcada por la búsqueda constante de dispositivos y sistemas electrónicos …
Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography
In this work, SiC Schottky diodes specifically developed for the BepiColombo space mission
are studied by Lock-in Infrared Thermography (LIT) to analyse local defects observed in their …
are studied by Lock-in Infrared Thermography (LIT) to analyse local defects observed in their …
Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension
B Asllani - 2016 - theses.hal.science
La diode Schottky SiC est un composant qui peut potentiellement remplacer la diode PiN Si
dans les applications de puissance. Effectivement, la tenue en tension élevée, la faible …
dans les applications de puissance. Effectivement, la tenue en tension élevée, la faible …
Failure analysis in power devices using lock-in infrared thermography
M Vellvehi, X Perpiñá, D Sánchez… - … and Multi-Physics …, 2018 - ieeexplore.ieee.org
In this work, the Infrared Lock-in Thermography (IR-LIT) is reported as a powerful tool for
power devices diagnosis. They are monitored by thermal means after being biased in the …
power devices diagnosis. They are monitored by thermal means after being biased in the …