Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
Initial access & beam alignment for mmWave and terahertz communications
W Attaoui, K Bouraqia, E Sabir - IEEE Access, 2022 - ieeexplore.ieee.org
The initial access in Millimeter wave (mmWave) 5G communications is very challenging and
time consuming. In general, mmWave and terahertz communications require the use of …
time consuming. In general, mmWave and terahertz communications require the use of …
Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors
S Znati, J Wharwood, KG Tezanos, X Li, PK Mohseni - Nanoscale, 2024 - pubs.rsc.org
Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for
fabricating a variety of semiconductor nanostructures. Since early investigations in 2000 …
fabricating a variety of semiconductor nanostructures. Since early investigations in 2000 …
A comprehensive investigation of vertically stacked silicon nanosheet field effect transistors: an analog/rf perspective
In this article, the analog/RF performance of n-channel vertically stacked gate all around
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
The DC and RF capability of GaN high electron mobility transistor (HEMT) was enhanced by
incoorporating BGaN back barrier (BB). Different types of back barriers like AlGaN, BGaN …
incoorporating BGaN back barrier (BB). Different types of back barriers like AlGaN, BGaN …
Design and investigation of a metamorphic InAs channel inset InP HEMT for cryogenic low-noise amplifiers
This work proposes a 100 nm metamorphic InP HEMT with an InAs channel inset for
cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier …
cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier …
[HTML][HTML] Engineering the thin film characteristics for optimal performance of superconducting kinetic inductance amplifiers using a rigorous modelling technique
BK Tan, F Boussaha, C Chaumont… - Open Research …, 2022 - ncbi.nlm.nih.gov
Background: Kinetic Inductance Travelling Wave Parametric Amplifiers (KITWPAs) are a
variant of superconducting amplifier that can potentially achieve high gain with quantum …
variant of superconducting amplifier that can potentially achieve high gain with quantum …
Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
[HTML][HTML] Parallel generation and coding of a terahertz pulse train
JE Nkeck, LP Béliveau, X Ropagnol, D Deslandes… - APL Photonics, 2022 - pubs.aip.org
The generation and coding of multi-cycle terahertz (THz) pulses offer interesting
possibilities, such as frequency comb spectroscopy or ultra-fast packet communication. In …
possibilities, such as frequency comb spectroscopy or ultra-fast packet communication. In …
Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance
The optimization of device dimensions along with high-k gate dielectric is investigated in this
work for improving RF/analog performance of double gate (DG) TFET device. Through …
work for improving RF/analog performance of double gate (DG) TFET device. Through …