Silicon carbide (SiC) MOSFETs are viable alternatives for silicon (Si) insulated-gate bipolar
transistors (IGBTs). However, direct retrofitting of SiC MOSFETs in Si IGBT-based converters …

Many industrial applications demand high-efficiency and high-power density power
electronic interfaces (PEI), resulting in adoption of emerging wide band gap (WBG) and ultra …

SiC MOSFETs are characterized by fast switching speeds typically in the range of 50-60 ns.
However, the parasitic MOSFET capacitance and load parasitic capacitance form a resonant …

We propose a low surge voltage and fast speed gate driver with switched capacitor circuit for
Silicon-Carbide (SiC) MOSFET. Because of the high switching frequency of SiC MOSFET …

We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC)
power MOSFETs. The proposed gate driver uses an inductor as a current source during …

The growing demand for high-performance power converters calls for the adoption of new
strategies, not only in architectures, but also in electronic technologies. To take full …

An active gate driver suitable for activating an electronic switch of an electric motor. The
active gate driver includes a pull up branch, a pull down branch and a current and voltage …

Wide band-gap devices are making inroads in the power converters scenario, and specific
circuits to drive these components are actively under development. The purpose of this …

In this paper a MHz-switching gate driver for SiC power MOSFETs is proposed. The
proposed gate driver can drive SiC power MOSFET cancelling out the influence of the …