Abstract Ferromagnetic Co2-Heusler compounds showing high spin polarization have been
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …

In this article, we studied the effect of annealing (600 C for 1 h) and the applied magnetic
field from 50 Oe to 20 kOe of Co 2 FeSi glass-coated microwires with ordered L2 1 structure …

Developing technology to realize oxide‐based nanoscale planar integrated circuits is in
high demand for next‐generation multifunctional electronics. Oxide circuits can have a …

We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction
bands at room temperature. Using four-terminal nonlocal spin-transport measurements in …

We show electrical properties of a Ge-based top-gate metal-oxide-semiconductor field-
effect transistor (MOSFET) structure with epitaxial ferromagnetic Heusler alloy/Ge Schottky …

We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor-based lateral spin-valve devices. From first-principles calculations, we …

We report the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor (SC)-based vertical spin-valve (VSV) devices on a silicon (Si) platform. Here …

Abstract Epitaxially grown Ge-on-Si (111) based vertical type light-emitting diodes (LEDs)
including a single strained SiGe layer or strained SiGe/Ge multiple quantum wells (MQWs) …

In this study, we demonstrate the low-temperature growth of a Ge layer via Sn doping in a
ferromagnet/Ge/Co-based Heusler alloy multilayer on a Si (111) substrate having a vertically …

Because spin‐orbit coupling in wurtzite semiconductors is relatively weak compared with
that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high …