In this review paper we give an overview on the present state of the art in modeling heat
transport in nanoscale devices and what issues we need to address for better and more …

In order to investigate the role of self-heating effects on the electrical characteristics of
nanoscale devices, we implemented a 2D Monte Carlo device simulator that includes the …

Power electronic devices are susceptible to catastrophic failures when they are exposed to
energetic particles; the most serious failure mechanism is single event burnout (SEB). SEB …

In this paper, a hydrodynamic model coupling electron and phonon transport in silicon
semiconductors has been formulated to describe off-equilibrium phenomena. Closure …

The electrothermal simulator developed in this work uses an iterative procedure that self-
consistently couples a Monte Carlo electronic trajectory simulation with a fast Fourier series …

This paper presents the results of comparative reliability study of two accelerated ageing
tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air–air test) …

Power diodes may undergo destructive failures when they are struck by high-energy
particles during the off state (high reverse-bias voltage). This paper describes the failure …

In this letter, we present our investigations on heating effects in Si on diamond and Si on AlN
transistors, using a coupled Monte Carlo/thermal moment expansion simulator. Both …

In this paper we present a study of self-heating effects in nanoscale SOI (Silicon-On-
Insulator) devices and conventional MOSFETs using an in-house electro-thermal particle …

Several new reduced-scale structures have been proposed to improve thermoelectric
properties of materials. In particular, superlattice thin films and wires should decrease the …