Fabrication of n-type nanocrystalline silicon thin-film by magnetron sputtering and antimony induced crystallization
O Shekoofa, J Wang, D Li - Archives of Advanced …, 2024 - ojs.bonviewpress.com
The fabrication of n-type nanocrystalline silicon thin films using magnetron sputtering and
crystallization by adding antimony and thermal treatment is presented in this article. Firstly, a …
crystallization by adding antimony and thermal treatment is presented in this article. Firstly, a …
Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
GeSn compounds have made many interesting contributions in photodetectors (PDs) over
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …
Formation techniques for upper active channel in monolithic 3D integration: an overview
AHT Nguyen, MC Nguyen, AD Nguyen, SJ Jeon… - Nano …, 2024 - Springer
The concept of three-dimensional stacking of device layers has attracted significant attention
with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration …
with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration …
[HTML][HTML] The growth kinetics of intermetallic compounds by the fast diffusion path at the interface of Co and molten Zn
M Oh, K Matsushita, E Kobayashi, M Kajihara - Journal of Molecular Liquids, 2024 - Elsevier
This study investigates the growth and microstructure formation of intermetallic compounds
at the solid/liquid interface of a Co/Zn diffusion couple prepared using an isothermal …
at the solid/liquid interface of a Co/Zn diffusion couple prepared using an isothermal …
Band alignment engineering of p-Ge/n-Si heterojunction for low cost tandem solar cell applications
The current research work deals with synthesis and optimization of polycrystalline
germanium thin films to develop Ge/Si heterojunction with appropriate band alignment for …
germanium thin films to develop Ge/Si heterojunction with appropriate band alignment for …
Germanene Reformation from Oxidized Germanene on Ag (111)/Ge (111) by Vacuum Annealing
For group 14 mono‐elemental 2D materials, such as silicene, germanene, and stanene,
oxidation is a severe problem that alters or degrades their physical properties. This study …
oxidation is a severe problem that alters or degrades their physical properties. This study …
[HTML][HTML] Preparation of polycrystalline silicon by metal-induced crystallization of silicon–carbon powder
In this study, we successfully obtained crystalline silicon from silica powder using a metal-
induced crystallization method. For this purpose, powders were first prepared from …
induced crystallization method. For this purpose, powders were first prepared from …
Effect of copper-induced crystallization on structural, morphological, optical, and electrical properties of thin germanium films
G Singh, D Gupta, S Aggarwal - Optical Materials, 2025 - Elsevier
The present study explores the Copper (Cu)-induced crystallization of amorphous
germanium (Ge) films deposited on glass substrate using RF sputtering. The impact of post …
germanium (Ge) films deposited on glass substrate using RF sputtering. The impact of post …
Fractal formalism in crystallized-Ge via Al induced crystallization under ion irradiation
The fractal characterization of polycrystalline-Ge formed via Al induced crystallization under
ion irradiation is presented. The polycrystalline (p-) Al (50 nm)/amorphous (a-) Ge (50 nm) is …
ion irradiation is presented. The polycrystalline (p-) Al (50 nm)/amorphous (a-) Ge (50 nm) is …
非晶硅薄膜晶化微观组织调控发展现状.
侯君祎， 马晓波， 王宁， 杨塔 - Electronic Components & …, 2024 - search.ebscohost.com
非晶硅薄膜晶化微观组织调控是实现微电子器件性能提升的关键. 比较分析了辅助外场,
界面调控, 掺杂调控和工艺参数等非晶硅薄膜晶化微观组织调控技术方法 …
界面调控, 掺杂调控和工艺参数等非晶硅薄膜晶化微观组织调控技术方法 …