T Letavic, J Petruzzello, M Simpson… - Proceedings of the …, 2001 - ieeexplore.ieee.org
A ten-mask lateral smart-discrete process technology which combines novel high-voltage RESURF transistor structures and a merged bipolar/DMOS process flow on thin-layer SOI …
G Spiazzi, S Buso, D Tagliavia - 2000 IEEE 31st Annual Power …, 2000 - ieeexplore.ieee.org
A low-loss, high-power-factor flyback rectifier is presented, which is designed as a possible application for a new type of smart power integrated circuit. This is going to be manufactured …
A Consoli, M Cacciato, A Testa… - 2004 IEEE 35th …, 2004 - ieeexplore.ieee.org
A new, very promising family of IGBTs has been recently carried out in" mesh overlay" technology. If compared with previous generations of IGBTs, new PowerMESH devices …
M Cacciato, A Consoli, D Tagliavia… - IEEJ Transactions on …, 2001 - jstage.jst.go.jp
Time domain simulation is essential in computer aided design and debug of Power Integrated Circuits. Behavioral models allow to largely increase simulation speed and …
ANNBB Model, M Cacciato, A Consoli, D Tagliavia… - iee.or.jp
Time domain simulation is essential in computer aided design and debug of Power Integrated Circuits. Behavioral models allow to largely increase simulation speed and …
C Bromberger - US Patent 7,466,206, 2008 - Google Patents
It is therefore an object of the present invention to provide an amplifier circuit that reduces as much as possible inter modulation distortion when a vertically integrated cascode structure …