A SiGe BiCMOS D-band LNA with gain boosted by local feedback in common-emitter transistors

G De Filippi, L Piotto, A Bilato… - 2023 IEEE Radio …, 2023 - ieeexplore.ieee.org
The performance of silicon amplifiers in D-band is limited by the low gain of transistors
operated close to f_\max. Cascode stages, yielding higher gain than a single device, are …

A miniaturized chip-based ODNP platform

Q Yang, H Lotfi, F Dreyer, M Kern… - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
In this paper, we present a miniaturized chip-based Overhauser dynamic nuclear
polarization (ODNP) platform for enhancing detection sensitivity and, thereby, improving the …

A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks

G De Filippi, L Piotto, A Bilato… - 2023 18th European …, 2023 - ieeexplore.ieee.org
Silicon amplifiers in D-Band are required to operate at high gain-bandwidth products and
close to the cutoff frequency f_\max. Multi-stage amplifiers commonly employ stagger-tuning …

D-Band RX Front-End With a 0–360 Phase Shifter Based on Programmable Passive Networks in SiGe-BiCMOS

G De Filippi, L Piotto, MM Pirbazari… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Active phased arrays are key enablers for high-capacity wireless links and imaging sensors
at millimeter wave, but require advanced front-end circuits. On the receiver side, the front …

An S-band SiGe BiCMOS transmitter for an NV center based quantum magnetometer

H Lotfi, M Kern, T Unden, J Scharpf… - … on Circuits and …, 2024 - ieeexplore.ieee.org
The excellent performance of quantum magnetometers based on nitrogen-vacancy (NV)
centers in diamond, including their high sensitivity, their wide dynamic range, and the …

Low-Noise Amplifiers and Phase Shifters in SiGe BiCMOS for D-Band RX Front-Ends

G DE FILIPPI TEDESCHI - 2024 - iris.unipv.it
The ever-increasing demand for faster data transfer-rate and higher device density in mobile
applications is posing severe requirements to the network infrastructure for 5G and beyond …

150 GHz Differential Amplifiers with Lumped-Elements Matching Networks in 55 nm SiGe BiCMOS

I Petricli, H Lotfi, A Mazzanti - 2020 27th IEEE International …, 2020 - ieeexplore.ieee.org
This paper presents compact D-band amplifiers in 55 nm SiGe BiCMOS technology. Device
models and design tools are first validated with measurements on elementary components …

D-Band Amplifiers in SiGe BiCMOS for Wireless Backhaul in 5G and Beyond

I Petricli - 2021 - iris.unipv.it
The never ending demand for wider bandwidth, coupled with the evolution of technology,
drives the progress of silicon ICs beyond 100GHz. The wide available spectrum in D-band …