Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

The demand for high-performance devices that are used in electrochemical energy
conversion and storage has increased rapidly. Tremendous efforts, such as adopting new …

The inclusion of plasma in atomic layer deposition processes generally offers the benefit of
substantially reduced growth temperatures and greater flexibility in tailoring the gas-phase …

Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of
interest to optoelectronics and telecommunication. Such applications require the deposition …

Plasma enhanced atomic layer deposition (PEALD) is a cyclic atomic layer deposition
process that incorporates plasma-generated species into one of the cycle substeps. The …

Plasma-enhanced atomic layer epitaxy (PEALE) is a cyclic atomic layer deposition process
that incorporates plasma-generated species into one of the cycle substeps to achieve layer …

Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin
indium nitride (InN) films at significantly reduced process temperatures and with greater …

Plasma enhanced atomic layer deposition (PEALD) is a cyclic atomic layer deposition (ALD)
process that incorporates plasma-generated species into one of the cycle substeps. The …

Mixtures of Ar with N 2 are relevant for many areas of plasma applications. In particular,
modeling of atmospheric pressure plasma jets for biomedical applications requires precise …