Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

Graphite phase carbon nitride (g-C3N4) is a promising catalyst for artificial photocatalytic
carbon dioxide (CO2) reduction. However, the fast carrier recombination and the …

The electrochemical methanol–hydrogen transformation as a significant technique for
hydrogen generation is limited by a low Pt catalytic efficiency. Herein, the doping and …

Magnetic tunnel junctions (MTJ) with MgO/Fe based interfaces and out-of-plane spin
direction form the basis of present-day spin-transfer-torque magnetic random-access …

Cobalt metallic films are the subject of an ever-expanding academic and industrial interest
for incorporation into a multitude of new technological applications. This report reviews the …

Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of
interest to optoelectronics and telecommunication. Such applications require the deposition …

We present a novel plasma-assisted approach to deposit crystalline triazine-based graphitic
carbon nitride directly onto solid substrates by fast and specific polymerisation of 2, 4, 6 …

The development of efficient and stable earth-abundant water oxidation catalysts is vital for
economically feasible water-splitting systems. Cobalt phosphate (CoPi)-based catalysts …

The selective Co capping is essential for improving the electromigration resistance of the
copper interconnects. We studied the mechanism of selective Co deposition using CpCo …