Laser Annealing and Dopant Activation in III-V Materials

VC Sorg - 2017 - search.proquest.com
For the past 50 years, the electronics industry has profited from their ability to follow Moore's
Law, doubling the performance of the computer chip approximately every two years …

Characterization Scheme for III-V Junction Development

PY Hung, C McDonough, R Geer, RJ Hill… - ECS …, 2011 - iopscience.iop.org
This work introduces a characterization scheme for junction development of conventional
inversion mode bulk MOSFETs with novel III-V substrates, that effectively reduces the cost …