Stabilization and Band-Gap Tuning of the 1T-MoS2 Monolayer by Covalent Functionalization
The MoS2 monolayer is the second most studied two-dimensional material after graphene.
However, the covalent chemistry through the S layers has not been fully explored for …
However, the covalent chemistry through the S layers has not been fully explored for …
Microwave microscopy and its applications
Understanding the nanoscale electrodynamic properties of a material at microwave
frequencies is of great interest for materials science, condensed matter physics, device …
frequencies is of great interest for materials science, condensed matter physics, device …
Near-field optical imaging and spectroscopy of 2D-TMDs
Y Kim, J Kim - Nanophotonics, 2021 - degruyter.com
Two-dimensional transition metal dichalcogenides (2D-TMDs) are atomically thin
semiconductors with a direct bandgap in monolayer thickness, providing ideal platforms for …
semiconductors with a direct bandgap in monolayer thickness, providing ideal platforms for …
Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors
The understanding of various types of disorders in atomically thin transition metal
dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in …
dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in …
Spatially Resolved Persistent Photoconductivity in MoS2–WS2 Lateral Heterostructures
The optical and electronic properties of 2D semiconductors are intrinsically linked via the
strong interactions between optically excited bound species and free carriers. Here we use …
strong interactions between optically excited bound species and free carriers. Here we use …
Nondestructive imaging of atomically thin nanostructures buried in silicon
It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …
Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy
E Brinciotti, G Gramse, S Hommel, T Schweinboeck… - Nanoscale, 2015 - pubs.rsc.org
We present a new method to extract resistivity and doping concentration of semiconductor
materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using …
materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using …
Imaging carrier inhomogeneities in ambipolar tellurene field effect transistors
The development of van der Waals (vdW) homojunction devices requires materials with
narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport …
narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport …
Noninvasive imaging method of microwave near field based on solid-state quantum sensing
B Yang, Y Dong, ZZ Hu, GQ Liu… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we propose a noninvasive method of imaging the microwave (MW) near field
using a diamond containing nitrogen-vacancy (NV) centers. We applied a synchronization …
using a diamond containing nitrogen-vacancy (NV) centers. We applied a synchronization …
Nanoscale surface photovoltage mapping of 2D materials and heterostructures by illuminated Kelvin probe force microscopy
Nanomaterials are interesting for a variety of applications, such as optoelectronics and
photovoltaics. However, they often have spatial heterogeneity, ie, composition change or …
photovoltaics. However, they often have spatial heterogeneity, ie, composition change or …