We investigate the application of convolutional neural networks (CNNs) to accelerate
quantum mechanical transport simulations (based on the nonequilibrium Green's function …

Quantum effects play an important role in determining the double‐gate (DG) MOSFETs
characteristics. The non‐equilibrium Green's function formalism (NEGF) in real‐space (RS) …

In this paper, we have analyzed the electrical characteristics of Strained Junctionless
Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport …

A novel computationally efficient approach for simulation of quantum transport in nanoscale
devices is proposed. The idea is based on partial coupling between the modes of the …

The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by
the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd …

Quantum effects play a vital role in determining the transistor characteristics of FinFET
devices. Quantum confinement, coherent ballistic transport, and quantum mechanical …

Gate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both
coupled-mode space (CMS) and real space (RS) is reported. The transport models were …

A novel approach is proposed, termed Partial-Coupled Mode Space (PCMS), for simulation
of quantum transport in nanoscale devices. The PCMS integrates advantage of Coupled …

Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium
Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) …

Nanowires are emerging as promising candidates to form the basis of field-effect transistors,
among other devices. Nanowire-based field-effect transistors are foreseen to be industrially …