Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …
localized conductive filament paths, and HfO2 has been accepted as one of the most …
In-plane charged domain walls with memristive behaviour in a ferroelectric film
Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …
memory and logic technologies in which domain walls, rather than domains, serve as an …
Review of applications of 2D materials in memristive neuromorphic circuits
Neuromorphic systems with large-scale parallel computing capability and low power
consumption have become important for the development of artificial intelligence …
consumption have become important for the development of artificial intelligence …
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Although vertical configurations for high-density storage require challenging process steps,
such as etching high aspect ratios and atomic layer deposition (ALD), they are more …
such as etching high aspect ratios and atomic layer deposition (ALD), they are more …
Demonstration of synaptic characteristics in VRRAM with TiN nanocrystals for neuromorphic system
To efficiently develop an extremely intensive storage memory, the resistive random‐access
memory (RRAM), which operates by producing and rupturing conductive filaments, is …
memory (RRAM), which operates by producing and rupturing conductive filaments, is …
A self-rectification and quasi-linear analogue memristor for artificial neural networks
W Wang, R Wang, T Shi, J Wei, R Cao… - IEEE Electron …, 2019 - ieeexplore.ieee.org
A memristor with a bilayer electrolyte structure (Pt/C/NbOx/TiN) is proposed as a self-
rectification and quasi-linear electronic synapse. The device shows self-rectifying analogue …
rectification and quasi-linear electronic synapse. The device shows self-rectifying analogue …
Resistance switching characteristics and mechanisms of MXene/SiO2 structure-based memristor
X Lian, X Shen, M Zhang, J Xu, F Gao, X Wan… - Applied Physics …, 2019 - pubs.aip.org
Silicon dioxide memristors possess multiple resistance states and can be used as a key
component of memory devices and neuromorphic systems. However, their conductive …
component of memory devices and neuromorphic systems. However, their conductive …
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
U Rasheed, H Ryu, C Mahata, RMA Khalil… - Journal of Alloys and …, 2021 - Elsevier
Internet of things and big data demand the development of new techniques for memory
devices going beyond conventional ways of memorizing and computing. In this work, we …
devices going beyond conventional ways of memorizing and computing. In this work, we …
Fabrication of graphene oxide-based resistive switching memory by the spray pyrolysis technique for neuromorphic computing
Recently, resistive switching memory (RRAM) has been attractive for implementing
electronic synapses in neural networks and high-density memory technology. In this paper …
electronic synapses in neural networks and high-density memory technology. In this paper …