Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …

Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

Due to the difficulty of p-type doping in β-Ga 2 O 3, NiO/β-Ga 2 O 3 heterojunction becomes
a promising candidate for fabricating bipolar devices. In this work, we performed a …

Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …

Mist chemical vapor deposition (mist-CVD) has recently attracted interest as a facile, cost-
effective, environmentally friendly method for the deposition of Ga 2 O 3 films. This paper …

β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is
considered to be one of the most promising candidates for power devices including field …

The performance of β-Ga 2 O 3 Schottky contacts (SCs) fabricated using amorphous,
intentionally oxidized platinum–iridium alloys was investigated as a function of alloy …

In this work, a PEDOT: PSS/Sn: α-Ga 2 O 3 hybrid heterojunction diode (HJD) photodetector
was fabricated by spin-coating highly conductive PEDOT: PSS aqueous solution on the mist …

High performance β–Ga 2 O 3 trench Schottky barrier diodes (SBDs) were demonstrated
with the employment of a novel etching technique called self-reactive etching (SRE). Owing …