Hydrogen effects at sputtered Tb-doped AlNxOy: H/c-Si (p) interfaces: A transient surface photovoltage spectroscopy study
J Dulanto, S Fengler, MA Sevillano-Bendezú… - Thin Solid Films, 2022 - Elsevier
In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-
doped AlNxOy: H) deposited under different hydrogen flows with p-type doped crystalline …
doped AlNxOy: H) deposited under different hydrogen flows with p-type doped crystalline …
Contribution to the Tb-Doped AlNxOy: H/c-Si (p) Interface Study Using Surface Photovoltage (SPV) Techniques for Potential Photovoltaic Applications
JAD Carbajal, R Grieseler - 2023 - search.proquest.com
Abstract Hydrogenated Aluminum Oxynitride (AlN x O y: H) is a versatile material for the
surface passivation of crystalline silicon (c-Si). The capability of having positive or negative …
surface passivation of crystalline silicon (c-Si). The capability of having positive or negative …