The layered two-dimensional (2D) materials, eg, the well-known graphene, transition metal
dichalcogenides, and topological insulators, have attracted great interest of researchers …

In the experiments on the etched surface of gallium arsenide were performed. We studied
the effect of BCl 3 gas flow rate on the thickness of the etched layer. GaAs etching rate was …

In this paper, experimental studies were carried out on the formation of a microrelief on the
surface of gallium arsenide substrates. The surface was modified by the method of plasma …

This work is devoted to the analysis of problems of the present methods of surface treatment
and the preparation of structures with nanoscale. The urgency of the work is caused by the …

This experimental work is devoted to the regimes of obtaining arrays of carbon nanotubes.
Arrays of perpendicular nanotubes perpendicular to the surface were obtained by the …

The lateral damage induced by focused ion beam on silicon carbide was characterized
using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance …

The results of experimental studies of the resolving power and accuracy of nanosized
profiling using focused ion beams (FIBs) are presented. Dependences of the resolving …

We demonstrate an experimental approach for prototyping heterojunctions formed between
graphene and bulk semiconductor substrates. This approach employs focused ion beam …

The controlled and reproducible formation of a nanoscale interelectrode gap is crucial for
the development of next-generation nanoelectronics devices, such as nano …

Abstract The development of GaAs/Si heterostructures can be an important stage for use as
solar cells, LEDs and lasers based on silicon substrates. At present, A3B5 compounds …