Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs
Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target, along
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model
The electrothermal performance of a junctionless nanowire [JL-nanowire (NW)] gate-all-
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
Low-frequency noise and random telegraph noise on near-ballistic III-V MOSFETs
In this paper, we report the observation of random telegraph noise (RTN) in highly scaled
InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low …
InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low …
3D modeling of spatio-temporal heat-transport in III-V gate-all-around transistors allows accurate estimation and optimization of nanowire temperature
Excellent electrostatic control offered by gate-all-around (GAA) geometry makes
multinanowire (multi-NW) MOSFET a promising candidate for sub-10-nm technology nodes …
multinanowire (multi-NW) MOSFET a promising candidate for sub-10-nm technology nodes …
Investigating the impact of self-heating effects on some thermal and electrical characteristics of dielectric pocket gate-all-around (DPGAA) MOSFETs
The dielectric pocket gate-all-around (DPGAA) MOSFET is being considered the best suited
candidate for ULSI electronic chips because of excellent electrostatic control over the …
candidate for ULSI electronic chips because of excellent electrostatic control over the …
An insight into self-heating effects and its implications on hot carrier degradation for silicon-nanotube-based double gate-all-around (DGAA) MOSFETs
Silicon-Nanotube-based ultra-thin DGAA MOSFETs have been extensively studied for their
superior immunity to short channel effects (SCEs) and better drive current capability; …
superior immunity to short channel effects (SCEs) and better drive current capability; …
Self-heating effects and hot carrier degradation in In0. 53Ga0. 47As gate-all-around MOSFETs
Abstract In 0.53 Ga 0.47 As based gate-all-around (GAA) metal-oxide-semiconductor field-
effect transistors (MOSFETs) are being pursued as a promising solution to high speed ultra …
effect transistors (MOSFETs) are being pursued as a promising solution to high speed ultra …
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs
P Srinivas, PK Tiwari - IEEE Transactions on Device and …, 2021 - ieeexplore.ieee.org
In 0.53 Ga 0.47 As based gate-all-around (GAA) MOSFETs are very promising for high
frequency applications because they deliver higher current and transconductance compared …
frequency applications because they deliver higher current and transconductance compared …
Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs
In this work, we report the first observation of RTN in highly scaled InGaAs GAA MOSFETs
fabricated by a top-down approach. RTN and low frequency noise were systematically …
fabricated by a top-down approach. RTN and low frequency noise were systematically …
Spatio-temporal mapping of device temperature due to self-heating in Sub-22 nm transistors
With the increase of transistor density and adoption of novel geometries, such as, FinFET,
ETSOI, and gate-all-around nanowire (GAA NW) transistors, self-heating has emerged as a …
ETSOI, and gate-all-around nanowire (GAA NW) transistors, self-heating has emerged as a …