Supramolecular aggregate of Cadmium (II)-based one-dimensional coordination polymer for device fabrication and sensor application
A novel mixed ligand one-dimensional coordination polymer (1D CP),{[Cd2 (adc) 2 (4-nvp)
6]·(MeOH)·(H2O)} n (1; H2adc= 9, 10-anthracenedicarboxylic acid, and 4-nvp= 4-(1 …
6]·(MeOH)·(H2O)} n (1; H2adc= 9, 10-anthracenedicarboxylic acid, and 4-nvp= 4-(1 …
Light induced charge transport property analysis of nanostructured ZnS based Schottky diode
In this report we have investigated the light sensing behavior and also discussed the
induced charge transport phenomena through the junction made by aluminium and …
induced charge transport phenomena through the junction made by aluminium and …
A Cd (II)-based MOF as a photosensitive Schottky diode: experimental and theoretical studies
S Halder, A Dey, A Bhattacharjee, J Ortega-Castro… - Dalton …, 2017 - pubs.rsc.org
A Cd (II) based 2D metal–organic framework (MOF),[Cd (4-bpd)(SCN) 2] n (1) where 4-bpd=
1, 4-bis (4-pyridyl)-2, 3-diaza-1, 3-butadiene, has been synthesized and characterized by …
1, 4-bis (4-pyridyl)-2, 3-diaza-1, 3-butadiene, has been synthesized and characterized by …
Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface
E Erbilen Tanrıkulu, İ Taşçıoğlu - Journal of Electronic Materials, 2023 - Springer
In the present study, voltage-dependent variation of the interface traps (D it) and series
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA: n-ZnSe Schottky barrier diodes
M Sharma, SK Tripathi - Materials Science in Semiconductor Processing, 2016 - Elsevier
This paper reports the frequency dependence of admittance measurements ie C–V and G/ω–
V characteristics of Al/Al 2 O 3/PVA: n-ZnSe MIS diode. The interface states (N ss) and series …
V characteristics of Al/Al 2 O 3/PVA: n-ZnSe MIS diode. The interface states (N ss) and series …
Optical and electrical characterization of a ZnO/coronene-based hybrid heterojunction photodiode
Metal oxide hexagonal ZnO thin film with thickness of approximately 509 nm was
successfully grown on a glass/ITO substrate by electrochemical deposition. It was observed …
successfully grown on a glass/ITO substrate by electrochemical deposition. It was observed …
A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) …
In this study, both the metal-semiconductor (MS) and metal-polymer-semiconductor
(MPS),(Al/C 20 H 12/p-Si), type Schottky barrier diodes (SBDs) were fabricated using spin …
(MPS),(Al/C 20 H 12/p-Si), type Schottky barrier diodes (SBDs) were fabricated using spin …
Synthesis of a Cd (II) based 1D coordination polymer by in situ ligand generation and fabrication of a photosensitive electronic device
A 2-mercaptobenzoic acid (2-mba) based zigzag one-dimensional coordination polymer (1D
CP)[Cd (2, 2′-dsb)(4-nvp)(DMF)(H2O)](1)[H22, 2′-dsb= 2, 2′-disulfanediyldibenzoic acid …
CP)[Cd (2, 2′-dsb)(4-nvp)(DMF)(H2O)](1)[H22, 2′-dsb= 2, 2′-disulfanediyldibenzoic acid …
Molecular design of interfacial layers based on conjugated polythiophenes for polymer and hybrid solar cells
JE Houston, S Richeter, S Clément… - Polymer …, 2017 - Wiley Online Library
In the past two decades, bulk heterojunction organic photovoltaic (OPV) devices have
emerged as attractive candidates for solar energy conversion due to their lightweight design …
emerged as attractive candidates for solar energy conversion due to their lightweight design …
Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room …
The forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V) and
conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier …
conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier …