Amorphous metal-oxide semiconductors have emerged as potential replacements for
organic and silicon materials in thin-film electronics. The high carrier mobility in the …

Transparent conductive oxides (TCOs) are a well‐known material class allowing Ohmic
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …

We investigated the transfer characteristics and the gate-bias stability of amorphous indium-
gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen …

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …

We investigated copper oxides for use as an active layer of p-channel field-effect thin-film
transistors (TFTs). Cu 2 O thin films deposited at room temperature using rf magnetron …

We proposed and fabricated amorphous indium-gallium-zinc-oxide thin-film transistors
(TFTs) employing a novel organic-passivation layer (CYTOP) that results in low damage and …

We report on the determination of band offsets in rf-sputtered Aluminum Zinc Oxide
(AZO)/single crystal β-Ga 2 O 3 (AZO/Ga 2 O 3) heterostructures using X-Ray Photoelectron …

Amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with different channel layer
thickness were fabricated on silicon wafers by radio frequency magnetron sputtering method …

Abstract 1 The electrical performance and bias stability of radio-frequency magnetron co-
sputtered aluminum-indium-zinc oxide (Al-IZO) thin-film transistors (TFTs) were investigated …

X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the
valence band (ΔE v) of SiO 2/InZnGaO 4 (IGZO) heterostructures deposited by low …