Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system
with large electron mobilities which makes it a prospective candidate for future carbon …

Quasi-free-standing epitaxial graphene is obtained on SiC (0001) by hydrogen intercalation.
The hydrogen moves between the (6 3× 6 3) R 30° reconstructed initial carbon layer and the …

Epitaxial graphene on SiC (0001) suffers from strong intrinsic n-type doping. We
demonstrate that the excess negative charge can be fully compensated by noncovalently …

Raman spectra were measured for mono-, bi-, and trilayer graphene grown on SiC by solid
state graphitization, whereby the number of layers was preassigned by angle-resolved …

We report on the interface between graphene and 4 H-Si C (0001) as investigated by
scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). It is …

Graphene with its unconventional two-dimensional electron gas properties promises a
pathway towards nanoscaled carbon electronics. Large scale graphene layers for a possible …

Stoichiometric and pure Al 2 O 3 gate dielectric films were grown on n-type 4 H-Si C by a
thermal atomic layer deposition process. The electrical properties of both amorphous and …

The growth of epitaxial graphene on SiC has been identified as one of the most promising
techniques to produce graphene for electronic applications. In this paper, we present a …

In heavily n-doped graphene, when pushing the Fermi level to the vicinity of the Van Hove
singularity, exotic electronic ground states are expected to occur driven by many-body …

The synthesis of new graphene‐based quantum materials by intercalation is an auspicious
approach. However, an accompanying proximity coupling depends crucially on the …