Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features
In this work, two different strategies to preserve InAs/GaAs QDs against decomposition
during the capping process have been compared structurally and optically. They are based …
during the capping process have been compared structurally and optically. They are based …
Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction
T Borrely, A Alzeidan, MD de Lima… - Solar Energy Materials …, 2023 - Elsevier
The effects of growth conditions on InAs/GaAs submonolayer-quantum-dot solar cells are
still a little explored topic, and the literature shows contradictory results regarding the …
still a little explored topic, and the literature shows contradictory results regarding the …
Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment
In this study, we have employed a unique technique called digital alloy capping to grow the
strain reducing capping layer on InAs quantum dots (QDs). Four different capping materials …
strain reducing capping layer on InAs quantum dots (QDs). Four different capping materials …
Impact of digital alloy capping layers on bilayer InAs quantum dot heterostructures
The influence of digital alloy capping technique on the strain-coupled bilayer InAs quantum
dots (QDs) has been presented. Multiple capping layers of different composition have been …
dots (QDs) has been presented. Multiple capping layers of different composition have been …
Shifting the plasmonic resonance to infrared region for AlP by inducing high S concentration: Indirect to direct band gap
In this work, structural, electronic, dielectric and thermoelectric properties of AlP with the
presence of sulfur (S) impurities with various concentrations to form A l 1 P 1− x S x with x …
presence of sulfur (S) impurities with various concentrations to form A l 1 P 1− x S x with x …
Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers
TV Torchynska, RC Tamayo, G Polupan… - Journal of Electronic …, 2021 - Springer
The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated
in the GaAs/Al0. 30Ga0. 70As structures with different compositions of the quantum well …
in the GaAs/Al0. 30Ga0. 70As structures with different compositions of the quantum well …
Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing
G Polupan, T Torchynska, LG Vega Macotela… - Journal of Materials …, 2020 - Springer
Abstract GaAs/Al 0.30 Ga 0.70 As/AlGaInAs/heterostructures grown by molecular beam
epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after …
epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after …
A comparative analysis of analog and digital alloy technique of InxGa1-xAs capping material on InAs quantum dot heterostructures
In this study, the concept of analog and digital alloy capping with ternary alloy In x Ga 1-x As
has been utilized in capping layer of InAs QDs. The composition of indium (In) in the capping …
has been utilized in capping layer of InAs QDs. The composition of indium (In) in the capping …
Hybrid stranski-krastanov/submonolayer quantum dot heterostructure with type-II band alignment: an efficient way of near infrared photovoltaic energy conversion
Photoabsorption throughout the entire solar spectrum and successive efficient photovoltaic
energy conversion are always being the primary goal in the domain of solar energy …
energy conversion are always being the primary goal in the domain of solar energy …
An analytical approach to study annealing induced interdiffusion of In and Ga for truncated pyramidal InAs/GaAs quantum dots
A strain-assisted model for studying the annealing induced interdiffusion of constituent
atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In …
atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In …