Defects in zno

MD McCluskey, SJ Jokela - Journal of Applied Physics, 2009 - pubs.aip.org
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …

In Situ Nanomechanics: Opportunities Based on Superplastic Nanomolding

H Fang, Y Pan, C Lu, J Liu, T Ding, Z Liu - ACS nano, 2023 - ACS Publications
In situ nanomechanics, referring to the real-time monitoring of nanomechanical deformation
during quantitative mechanical testing, is a key technology for understanding the physical …

Mechanical properties of ZnO nanowires under different loading modes

F Xu, Q Qin, A Mishra, Y Gu, Y Zhu - Nano Research, 2010 - Springer
A systematic experimental and theoretical investigation of the elastic and failure properties
of ZnO nanowires (NWs) under different loading modes has been carried out. In situ …

Impact of Defects and Disorder on the Stability of Ta3N5 Photoanodes

LM Wolz, G Grötzner, T Rieth, LI Wagner… - Advanced Functional …, 2024 - Wiley Online Library
The photoelectrochemical performance of Ta3N5 photoanodes is strongly impacted by the
presence of shallow and deep defects within the bandgap. However, the role of such states …

A review of microelectromechanical systems for nanoscale mechanical characterization

Y Zhu, TH Chang - Journal of Micromechanics and …, 2015 - iopscience.iop.org
A plethora of nanostructures with outstanding properties have emerged over the past
decades. Measuring their mechanical properties and understanding their deformation …

Mechanics of crystalline nanowires: an experimental perspective

Y Zhu - Applied Mechanics Reviews, 2017 - asmedigitalcollection.asme.org
A wide variety of crystalline nanowires (NWs) with outstanding mechanical properties have
recently emerged. Measuring their mechanical properties and understanding their …

Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires

A Soudi, P Dhakal, Y Gu - Applied Physics Letters, 2010 - pubs.aip.org
The minority carrier diffusion length, LD⁠, was directly measured in individual ZnO
nanowires by a near-field scanning photocurrent microscopy technique. The diameter …

Diameter-dependent surface photovoltage and surface state density in single semiconductor nanowires

A Soudi, CH Hsu, Y Gu - Nano letters, 2012 - ACS Publications
Based on single-nanowire surface photovoltage measurements and finite-element
electrostatic simulations, we determine the surface state density, N s, in individual n-type …

Silicon nitride background in nanophotonic waveguide enhanced Raman spectroscopy

A Dhakal, P Wuytens, A Raza, N Le Thomas, R Baets - Materials, 2017 - mdpi.com
Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride
(SiN) nanophotonic waveguide platform has higher signal enhancement when compared to …

Quantitative heat dissipation characteristics in current-carrying GaN nanowires probed by combining scanning thermal microscopy and spatially resolved Raman …

A Soudi, RD Dawson, Y Gu - Acs Nano, 2011 - ACS Publications
Using an approach combining scanning thermal microscopy (SThM) and spatially revolved
Raman spectroscopy, we have investigated quantitatively the heat dissipation …