Phase-change memory (PCM) is an emerging non-volatile memory technology that has
recently been commercialized as storage-class memory in a computer system. PCM is also …

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

The recent development of three‐dimensional semiconductor integration technology
demands a key component—the ovonic threshold switching (OTS) selector to suppress the …

Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

Phase-change materials (PCMs) are promising candidates for nonvolatile data storage and
reconfigurable electronics, but high programming currents have presented a challenge to …

Homomorphic encryption performs computations on encrypted data without decrypting,
thereby eliminating security issues during the data communication between clouds and …

Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …

Strongly correlated phases exhibit collective carrier dynamics that if properly harnessed can
enable novel functionalities and applications. In this article, we investigate the phenomenon …

High-current switching performance of ovonic threshold switching (OTS) selectors have
successfully enabled the commercialization of high-density three-dimensional (3D) …

Stackable select devices such as the oxide pn junction diode and the Schottky diode (one-
way switch) have been proposed for non-volatile unipolar resistive switching devices; …