Three-electron spin qubits

M Russ, G Burkard - Journal of Physics: Condensed Matter, 2017 - iopscience.iop.org
The goal of this article is to review the progress of three-electron spin qubits from their
inception to the state of the art. We direct the main focus towards the exchange-only qubit …

Physically defined triple quantum dot systems in silicon on insulator

R Mizokuchi, S Oda, T Kodera - Applied Physics Letters, 2019 - pubs.aip.org
We report characterizations of two types of Si triple quantum dot (TQD) devices with charge
sensors, with the aim of integrating spin qubits. The QDs of a single TQD device are …

A quantum-based building block for designing a nanoscale full adder circuit with power analysis

J Xu, G Hu, D Qian - Integration, 2023 - Elsevier
Quantum-dot cellular automata (QCA) concentrates charges using the Coulomb interaction.
Despite the nanometric scale and the extremely high projected working frequency, the need …

A genetic algorithm based logic optimization for majority gate-based QCA circuits in nanoelectronics

A Roohi, B Menbari, E Shahbazi, M Kamrani - Quantum Matter, 2013 - ingentaconnect.com
Traditional CMOS technology is approaching its physical limits, so employing novel
technologies such as nano-scale ones are being deployed. Quantum dots cellular automata …

Detection of charge motion in a non-metallic silicon isolated double quantum dot

T Ferrus, A Rossi, M Tanner, G Podd… - New Journal of …, 2011 - iopscience.iop.org
As semiconductor device dimensions are reduced to the nanometer scale, the effects of high-
defect-density surfaces on the transport properties become important to such an extent that …

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0. 8Ge0. 2 quantum well hetero-structure

SA Studenikin, L Gaudreau, K Kataoka… - Applied Physics …, 2018 - pubs.aip.org
We demonstrate coupled triple dot operation and charge sensing capability for the recently
introduced quantum dot technology employing undoped Si/Si 0.8 Ge 0.2 hetero-structures …

Suspended quantum dot fabrication on a heavily doped silicon nanowire by suppressing unintentional quantum dot formation

J Ogi, MA Ghiass, T Kodera, Y Tsuchiya… - Japanese journal of …, 2010 - iopscience.iop.org
We aim at embedding a quantum dot on a suspended nanowire by solving the problem of
unintentional quantum dot formation, which exacerbates in a suspended nanowire. The …

Energy spectra of three electrons in SiGe/Si/SiGe laterally coupled triple quantum dots

YF Ren, L Wang, Z Liu, MW Wu - Physica E: Low-dimensional Systems and …, 2014 - Elsevier
We investigate the energy spectra of three electrons in SiGe/Si/SiGe equilateral triangular
and symmetric linear triple quantum dots in the presence of magnetic (in either Faraday or …

Charge states of a collinearly and laterally coupled vertical triple quantum dot device

S Amaha, T Hatano, H Tamura, T Kubo… - Physica E: Low …, 2010 - Elsevier
Three laterally coupled vertical single quantum dots (tQDs) in a collinear arrangement, with
common source and drain electrodes, are investigated. The tQDs are formed inside three …

Antisymmetric Spin–Orbit Coupling Effect on Kondo-Induced Electric Polarization in a Triangular Triple Quantum Dot

M Koga, M Matsumoto, H Kusunose - Journal of the Physical Society …, 2017 - journals.jps.jp
We study the local antisymmetric spin–orbit (ASO) coupling effect on spin, orbital, and
charge degrees of freedom for the Kondo effect in a triangular triple quantum dot (TTQD) …