A 0.13-mum SiGe BiCMOS double-conversion superheterodyne receiver and transmitter
chipset for data communications in the 60-GHz band is presented. The receiver chip …

A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-
controlled oscillators have been implemented in a 0.12-/spl mu/m, 200-GHz f/sub T/290-GHz …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

A compact modeling approach for silicon-chip slow-wave transmission lines with slotted
bottom metal ground planes is studied and its limitations are presented. The modeling …

On-chip microstrip transmission lines have been measured on-wafer from below 1 GHz up to
110 GHz. Using different pad de-embedding techniques as well as a technique based on …

This paper presents a 1: 8 differential power divider implemented in a commercial SiGe
BiCMOS process using fully shielded broadside-coupled striplines integrated vertically in …

A high-frequency fine-pitched (ie, very narrow line width) thin-film transmission line (TL)
characterization technique is presented. A new dielectric permittivity determination …

The design of a differential distributed amplifier using close-packed transmission lines is
discussed along with the implementation of a differential distributed oscillator. Efficient …

This paper describes a number of significant modeling considerations for SiGe
heterojunction bipolar transistor power amplifiers operating at millimeter-wave frequencies …

This paper discusses the circuits, packaging, and antennas needed to realize a low-cost
millimeter-wave transceiver with integrated antenna in silicon technology. The principal …