Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …
attention due to their enhanced properties such as fast operation speed, simple device …
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory
C Ye, T Deng, J Zhang, L Shen, P He… - Semiconductor …, 2016 - iopscience.iop.org
Abstract We prepared bilayer HfO 2/TiO 2 resistive random accessory memory (RRAM)
using magnetron sputtering on an ITO/PEN flexible substrate. The switching voltages (V SET …
using magnetron sputtering on an ITO/PEN flexible substrate. The switching voltages (V SET …
[HTML][HTML] Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
In this work, we investigate the resistive switching in hafnium dioxide (HfO 2) and aluminum
oxide (Al 2 O 3) bilayered stacks using in-situ transmission electron microscopy and X-ray …
oxide (Al 2 O 3) bilayered stacks using in-situ transmission electron microscopy and X-ray …
Dynamic conductance characteristics in HfO x-based resistive random access memory
Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and
Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like …
Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like …
Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
Sneak path current is a severe hindrance for the application of high-density resistive random-
access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive …
access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive …
The enhanced electrode-dependent resistive random access memory based on BiFeO3
RW Chuang, CC Shih, CL Huang - Applied Physics A, 2023 - Springer
The electrode-dependent resistive random access memories (ReRAM) with aluminum,
silver, platinum, and indium tin oxide (ITO) judiciously selected as a pair of electrodes, and …
silver, platinum, and indium tin oxide (ITO) judiciously selected as a pair of electrodes, and …
Effects of Ag nano-islands and Al2O3 layer on the performance of HfO2-Based threshold switching devices
T Jiang, Y Zhang, Y Wang, F Long, C Huang… - Materials Science in …, 2025 - Elsevier
Threshold switching (TS) devices based on HfO 2 have been extensively studied for
applications such as artificial neurons and as selectors in 1S1R crossbar arrays. However …
applications such as artificial neurons and as selectors in 1S1R crossbar arrays. However …
ab initio study of quantized conduction mechanism in trilayered heterostructure for scaled down memory device applications
Interface of the layered heterostructure revealing the quantized conductance phenomena
which cannot be achieved with either semiconducting layer alone in absence of externally …
which cannot be achieved with either semiconducting layer alone in absence of externally …
[HTML][HTML] Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM
(T-RRAM) devices, which can be used to construct transparent electronics, has become …
(T-RRAM) devices, which can be used to construct transparent electronics, has become …