Integrated on-chip inductors with magnetic films

DS Gardner, G Schrom, P Hazucha… - 2006 International …, 2006 - ieeexplore.ieee.org
On-chip inductors with 2 levels of magnetic material were integrated into an advanced 130
nm CMOS process to obtain over an order of magnitude (> 14times) increase in inductance …

Na‐induced effects on the electronic structure and composition of Cu(In,Ga)Se2 thin‐film surfaces

C Heske, R Fink, E Umbach, W Riedl, F Karg - Applied physics letters, 1996 - pubs.aip.org
X‐ray and UV photoelectron spectroscopy measurements of Cu (InGa) Se2 thin films grown
on Mo coated soda‐lime glass show segregation from the substrate and formation of two …

Electron drift mobility of oxadiazole derivatives doped in polycarbonate

H Tokuhisa, M Era, T Tsutsui, S Saito - Applied physics letters, 1995 - pubs.aip.org
Charge drift mobilities of five oxadiazole derivatives doped in polycarbonate (PC) were
evaluated with the time‐of‐flight technique. It is demonstrated that oxadiazoles incline to …

Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation

M Yamaguchi, SJ Taylor, S Matsuda… - Applied physics …, 1996 - pubs.aip.org
An anomalous increase in the short‐circuit current I sc of n‐on‐p Si space solar cells,
followed by an abrupt decrease in I sc and cell failure has been observed under high …

Radiation response of Cu (In, Ga) Se/sub 2/solar cells

A Jasenek, U Rau, K Weinert… - 3rd World …, 2003 - ieeexplore.ieee.org
This contribution reviews the response of Cu (In, Ga) Se/sub 2/thin-film solar cells to
irradiation with high-energy electrons and protons of various energies and compares the …

High frequency (GHz) and low resistance integrated inductors using magnetic materials

DS Gardner, AM Crawford… - Proceedings of the IEEE …, 2001 - ieeexplore.ieee.org
Integrated microinductors, using magnetic materials were fabricated with cutoff frequencies
over 3 GHz. Magnetic materials are typically not used in high-frequency inductors because …

Minority carrier lifetime of GaAs on silicon

RK Ahrenkiel, MM Al‐Jassim, B Keyes… - Journal of the …, 1990 - iopscience.iop.org
The lifetime of minority carrier~ in GaAs grown heteroepitaxially on silicon is reduced two to
three orders of magnitude by recombination at mismatch dislocations. Here we fabricated …

Potential and present status of III–V/Si tandem solar cells

M Yamaguchi - 2014 IEEE 40th Photovoltaic Specialist …, 2014 - ieeexplore.ieee.org
III-V compound and Si tandem solar cells are expected to have great potential of space and
terrestrial application because of high efficiency, light weight and low cost potential …

Application of bi-directional thin-film micro wire array to RF integrated spiral inductors

M Yamaguchi, K Suezawa, M Baba… - IEEE transactions on …, 2000 - ieeexplore.ieee.org
Vertically and horizontally aligned micro wire arrays with the magnetic hard axis
perpendicular to the length of the wire are micro-fabricated from zero-magnetostrictive …

Atomic diffusion‐induced deep levels near ZnSe/GaAs (100) interfaces

AD Raisanen, LJ Brillson, L Vanzetti, A Bonanni… - Applied physics …, 1995 - pubs.aip.org
Luminescence spectroscopy measurements of ZnSe/GaAs (100) heterojunctions grown by
molecular beam epitaxy reveal the formation of deep levels near ''buried''interfaces upon …