Nanoionics enabled atomic point contact construction and quantum conductance effects

R Gao, X Ye, C Hu, Z Zhang, X Ji, Y Zhang… - Materials …, 2025 - pubs.rsc.org
The miniaturization of electronic devices is important for the development of high-density
and function-integrated information devices. Atomic-point-contact (APC) structures refer to …

Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N‐Shape Switching Transistors

J Seo, S Kang, D Kumar, W Shin, J Cho… - Advanced Functional …, 2024 - Wiley Online Library
In this study, a hybrid organic‐inorganic field‐effect transistor (FET) is proposed with n‐type
zinc‐tin oxide (ZTO) and p‐type dinaphtho [2, 3‐b: 2′, 3′‐f] thieno [3, 2‐b] thiophene …

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System

RH Koo, W Shin, S Kim, J Im, SH Park, JH Ko… - Advanced …, 2024 - Wiley Online Library
Hardware neuromorphic systems are crucial for the energy‐efficient processing of massive
amounts of data. Among various candidates, hafnium oxide ferroelectric tunnel junctions …

Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices

GH Lee, TH Kim, S Youn, J Park, S Kim, H Kim - Chaos, Solitons & Fractals, 2023 - Elsevier
On-chip learning in neuromorphic systems, wherein both training and inference are
performed on memristive synaptic devices, has been actively studied recently. However, on …

SnS2 memtransistor-based Lorenz chaotic system for true random number generation

S Rehman, MS Kim, MF Khan, S Kim - Nano Energy, 2024 - Elsevier
Abstract As the Internet of Things (IoT) landscape expands, the need for robust and energy-
efficient hardware security has increased. In this study, we demonstrate a novel true random …

A RRAM-based true random number generator with 2T1R architecture for hardware security applications

B Peng, Q Wu, Z Wang, J Yang - Micromachines, 2023 - mdpi.com
Resistance random access memory (RRAM) based true random number generator (TRNG)
has great potential to be applied to hardware security owing to its intrinsic switching …

Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications

RH Koo, W Shin, ST Lee, D Kwon, JH Lee - Chaos, Solitons & Fractals, 2025 - Elsevier
This study investigates the stochastic behavior of random telegraph noise (RTN) in
ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications …

Controllable Electrical Properties of ZrO2/BiFeO3 Bilayer Memristor from Synaptic Mimic to TRNG Circuit Application by Modulating Compliance Currents

Y Jin, M Zhu, Y Zhou, Z Zhang, J Wang… - Advanced Electronic …, 2024 - Wiley Online Library
Apart from simulating biological synapses, memristors can also be used in the secure
encryption by exploiting their inherent random resistive switching (RS) properties. In this …

Spontaneous High-Dynamic-Range Random Current Spiking in BaF2 Memristors

CH Lin, YT Chuang, CY Chen, HM Chen… - ACS Applied …, 2025 - ACS Publications
The need for robust cryptographic measures has become increasingly important in various
applications, including secure communication, artificial intelligent model training, and …

True random number generator using stochastic noise signal of memristor with variation tolerance

D Yu, S Ahn, S Youn, J Park, H Kim - Chaos, Solitons & Fractals, 2024 - Elsevier
Memristors are suitable for internet of things (IoT) edge devices due to their high scalability
and low power consumption. Also, their stochastic noise signals can be used to produce …