In this study, using the superposition model (SPM) and crystallographic data, the second-
and fourth-rank zero-field splitting (ZFS) parameters (ZFSPs) have been calculated for Fe3+ …

Superposition model (SPM) is employed to investigate the local environment around the
Fe3+ centers located at the two sites 1 and 2 in TlGaS2 single crystal exhibiting nominally …

This paper presents the results of dielectric constant and Electron Paramagnetic Resonance
(EPR) investigations of Fe3+-doped TlGaSe2 single crystals in the temperature range of 15 …

Temperature dependences of dark current, i (T), thermally stimulated current, TSC, and
current–voltage, I–V, characteristics have been investigated in p-type TlGaSe 2 single …

In this review article, we summarize the results of the first investigations of EPR spectra of
iron-doped ternary thallium chalcogenides TlInS2, TlGaSe2, and TlGaS2 in a wide …

The results of the studies of structural and magnetic properties of Fe-doped TlGaSe 2 (TlGa
1-x Fe x Se 2) layered magnetic semiconductor grown with two different doping …

Superposition model (SPM) calculations are carried out to provide theoretical interpretation
of the zero-field splitting (ZFS) parameters and investigate the local environment around the …

The results of investigations of dielectric and magnetodielectric properties of ternary layered
TlInS2 and TlGaSe2 ferroelectric crystals implanted with 40 keV Co+ ions at the fluency of …

In this article, the results of investigations of the structure and magnetization of iron
implanted TlInS 2 and TlGaSe 2 layered ferroelectric—semiconductor crystals have been …

Absorption measurements of TlGaSe2 crystals intentionally doped with Fe show growing
optical transitions below the band gap energies as impurity concentration increase. The …