Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Simulation study of phonon transport at the GaN/AlN superlattice interface: Ballistic and non-equilibrium phenomena
J Chen, K Wang, Z Wang - International Journal of Thermal Sciences, 2024 - Elsevier
GaN/AlN superlattice structures have potential for high electron mobility transistors (HEMTs)
applications; however, nonequilibrium phonon transport mechanisms within the superlattice …
applications; however, nonequilibrium phonon transport mechanisms within the superlattice …
[HTML][HTML] Guest Editorial: Dimensional Scaling of Material Functional Properties to Meet Back-End-of-Line (BEOL) Challenges
The discovery and design of novel materials with desired properties, as well as the
development of functional devices that harness new physics originating in these materials …
development of functional devices that harness new physics originating in these materials …
Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance
This research explores a comprehensive examination of gate underlap incorporated
strained channel Cylindrical Gate All Around Nanowire FET having enriched performances …
strained channel Cylindrical Gate All Around Nanowire FET having enriched performances …
Growth of samarium-substituted epitaxial bismuth ferrite films by chemical vapor deposition
There is great interest in BiFeO3 and various substituted heterostructures for ferroelectric
random-access memory (RAM) and energy-efficient magnetoelectric logic and memory …
random-access memory (RAM) and energy-efficient magnetoelectric logic and memory …
An insightful assessment of 1T-DRAM with misaligned polarity gate in RFET
AS Roy, S Semwal, A Kranti - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
The operation of a capacitorless (1T) dynamic random access memory (DRAM) can be
compromised if the storage region is located near metal–semiconductor junction in a …
compromised if the storage region is located near metal–semiconductor junction in a …
Extensive analysis of gate leakage current in nano-scale multi-gate MOSFETs
Excessive gate leakage is crucial for nanoscale metal oxide semiconductor field-effect
transistors (MOSFETs), resulting in unnecessary static power dissipation and switching …
transistors (MOSFETs), resulting in unnecessary static power dissipation and switching …
[PDF][PDF] Deep Insight into Channel Engineering of Sub-3 nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model.
A Khaliq, S Zhang, JZ Huang, K Kang… - Progress In …, 2022 - jpier.org
Based on a self-consistent Schrödinger-Poisson solver and top-of-the-barrier model, a
quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The …
quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The …
A survey on the latest FET technology for samsung industry
In semiconductor electronics firms like Samsung, field effect transistor (FET) technology is
the main design layout for high-performance applications. Gate-all-around (GAA) FETs …
the main design layout for high-performance applications. Gate-all-around (GAA) FETs …