The investigation of the water oxidation mechanism on photocatalytic semiconductor
surfaces has gained much attention for its potential to unlock the technological limitations of …

To improve the performance of III-nitride compound semiconductor-based optoelectronic
devices, highly reflective distributed Bragg reflectors (DBRs) are a requirement. In this …

To enhance Raman scattering, we propose a multi-layer substrate which behaves similar to
a magnetic mirror or what is also known as high-impedance surface (HIS). Due to this …

III-nitride materials are used for ultraviolet (UV) and visible light emitters. One such light
source is the vertical-cavity surface-emitting laser (VCSEL) that could find applications within …

Heterojunction device performance has strong dependence on its junction interface. ZnO
deposition over GaN to achieve a heterojunction is challenging as it usually requires high …

Wide bandgap semiconductors have appeared as promising materials suitable for
hightemperature, high-frequency and high power operations in electronic as well as …

We have demonstrated an electrically conductive ZnO/GaN multilayer structure using hybrid
plasma-assisted molecular beam epitaxy. Electrical IV characteristics were measured …

III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting
schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult …

Features related to AlN buffer layer, thick AlGaN bottom layer, and AlGaN quantum well
structure are identified by performing High resolution X-ray diffraction (HRXRD) …