Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received
great attention due to its unique properties. Because of low cost, absence of toxicity, and …

The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction
pattern indicates that CuSe thin film has an amorphous structure. Transmittance T (λ) and …

Postdeposition treatments (PDTs) are common technological approaches to achieve high-
efficiency chalcogenide solar cells. For SnS, a promising solar cell material, most PDT …

Thin films of SnS were fabricated at room temperature on glass substrates by thermal
evaporation. X-ray photo-electron spectroscopy confirmed that the films were stoichiometric …

In the current study, thin films of tin sulfide (SnS) were grown by sol–gel spin-coating
technique deposited on glass substrates. The obtained thin films were characterized using X …

In recent years, thin films of SnS have attracted much attention for the photovoltaic
applications due to the high absorption coefficient (≈ 104cm-1 near the fundamental …

Tin sulfide (SnS) has emerged in the field of layered metal chalcogenides (LMCs) as one of
the preferred semiconductors due to its prominent optical properties and high absorption …

This research investigates the fabrication of SnS-Si hybrids for photodetection and
photocatalysis using nanocolloids of tin sulfide (SnS), monocrystalline silicon (Si m) and …

Tin sulfide (SnS) thin films have been deposited by electrodeposition using potentiostaic
method on indium doped tin oxide (ITO) coated glass substrates from aqueous solution …

In this study, tin sulfide (SnS x) thin films were prepared using a solution-based spin-coating
method. The annealing temperature was observed to play a dominant role in determining …