Multiphysics modeling of femtosecond laser–copper interaction: From electron dynamics to plasma eruption
The femtosecond laser ablation of metals is a complex and violent nonequilibrium process,
and numerous studies have sought to reveal the evolution of a single physical phenomenon …
and numerous studies have sought to reveal the evolution of a single physical phenomenon …
Self-diffusion in amorphous silicon
F Strauß, L Dörrer, T Geue, J Stahn, A Koutsioubas… - Physical review …, 2016 - APS
The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …
Boron ripening during solid-phase epitaxy of amorphous silicon
By means of large-scale molecular dynamics simulations we provide a thorough atomic-
scale picture of boron incorporation in crystalline silicon upon solid-phase epitaxy. The …
scale picture of boron incorporation in crystalline silicon upon solid-phase epitaxy. The …
Elastic constants of defected and amorphous silicon with the environment-dependent interatomic potential
The elastic constants of a wide range of models of defected crystalline and amorphous
silicon are calculated, using the environment-dependent interatomic potential (EDIP). The …
silicon are calculated, using the environment-dependent interatomic potential (EDIP). The …
Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing
We report the breakdown behavior of a patterned Ge 2 Sb 2 Te 5 multiline structure during
the voltage-driven electric stress biasing. Scanning Auger microscope analysis shows that …
the voltage-driven electric stress biasing. Scanning Auger microscope analysis shows that …
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the …
C Krzeminski, Q Brulin, V Cuny, E Lecat… - Journal of applied …, 2007 - pubs.aip.org
The molecular dynamics method is applied to simulate the recrystallization of an
amorphous/crystalline silicon interface. The atomic structure of the amorphous material is …
amorphous/crystalline silicon interface. The atomic structure of the amorphous material is …
Sulfur point defects in crystalline and amorphous silicon
We present first-principles calculations for the behavior of sulfur point defects in crystalline
and amorphous silicon structures. By introducing the sulfur point defects at various …
and amorphous silicon structures. By introducing the sulfur point defects at various …
Molecular dynamics simulations of the mechanical properties of crystalline/amorphous silicon core/shell nanowires
Y Jing, Q Meng - Physica B: Condensed Matter, 2010 - Elsevier
The nanomechanical properties of Si/a-Si core–shell NWs are investigated using molecular
dynamics simulations with EDIP model. Under uniaxial compressive and tensile loading, the …
dynamics simulations with EDIP model. Under uniaxial compressive and tensile loading, the …
Device fabrication with solid–liquid–solid grown silicon nanowires
EK Lee, BL Choi, YD Park, Y Kuk, SY Kwon… - …, 2008 - iopscience.iop.org
High quality, single-crystal silicon nanowires were successfully grown from silicon wafers
with a nickel catalyst by utilizing a solid–liquid–solid (SLS) mechanism. The nanowires were …
with a nickel catalyst by utilizing a solid–liquid–solid (SLS) mechanism. The nanowires were …
Stability and plasticity of silicon nanowires: The role of wire perimeter
JF Justo, RD Menezes, LVC Assali - Physical Review B—Condensed Matter …, 2007 - APS
We investigated the properties of stability and plasticity of silicon nanowires using molecular
dynamics simulations. We considered nanowires with⟨ 100⟩,⟨ 110⟩, and⟨ 112⟩ growth …
dynamics simulations. We considered nanowires with⟨ 100⟩,⟨ 110⟩, and⟨ 112⟩ growth …